Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-05T02:41:07.366Z Has data issue: false hasContentIssue false

Optical Properties of Si and Ge/Si Nanocrystals in Silicon Oxide Matrix

Published online by Cambridge University Press:  01 February 2011

Shin-ichiro Uekusa
Affiliation:
[email protected], Meiji University, Science and Technology, A816 1-1-1 Higashimita Tama-ku, Kawasaki-shi, 214-8571, Japan
Atsuhiko Kushida
Affiliation:
[email protected], Meiji University, Science and Technology, A816 1-1-1 Higashimita Tama-ku, Kawasaki-shi, 214-8571, Japan
Get access

Abstract

The contribution of oxide-related emission in Photoluminescence (PL) spectra from Ge and Si nanocrystals mixture embedded in silicon oxide (Ge/Si-SiO2) and Si nanocrystals embedded in silicon oxide (Si-SiO2) thin film prepared by RF-magnetron co-sputtering method is investigated. All as-deposited thin films were annealed for 1 hour in the temperature range from 300 to 1100 °C in an Ar atmosphere. The samples were evaluated by using PL, Energy dispersive spectroscopy (EDX), Raman scattering and X-ray photoelectron spectroscopy (XPS) measurements. All the measurements were performed at room temperature. The maximum PL intensity of Ge+Si-SiO2 mixture thin film has increased more than the Si-SiO2 thin film by approximately 10 times. From the results of Raman scattering and XPS measurements, it is consider that the oxygen defect centers in the host material SiO2 increased by the diffusion of Ge. An increase in the PL intensity of Ge+Si-SiO2 mixture thin film is systematically discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Choi, Suk-ho, Han, Sung-chul and Hwang, Suntae, Thin Solid Films 413, 177 (2002).Google Scholar
2. Li, J., Wu, X.L., Yang, Y.M., Yang, X. and Bao, X.M., Physics Letters A 314, 299 (2003).Google Scholar
3. Khomenkova, L., Korsunska, N., Torchynska, T., Yukhimchuk, V., Jumayev, B., Many, A., Goldstein, Y., Savir, E. and Jedrzejewski, J., Journal of Physics: Condensed Matter 14, 13217 (2002).Google Scholar
4. Wu, X.M., Lu, M.J. and Yao, W.G., Surface and Coatings Technology 161, 92 (2002).Google Scholar
5. Korsunska, Baran, M., Khomenkova, L., Yukhymchuk, V., Goldstein, Y., Savir, E. and Jedrzejewski, J., Materials Science and Engineering C 23, 691 (2003).Google Scholar
6. Song, H.Z., Bao, X.M. and Adriaenssens, G.J., Physics Letters A 244, 449 (1998).Google Scholar
7. Zatsepin, A., Kortov, V.S. and Fitting, H.-J., Journal of Non-Crystalline Solids 351, 869 (2005).Google Scholar
8. Prokes, S.M. and Carlos, W.E., Journal of Applied Physics 78, 2671 (1995).Google Scholar
9. Giri, P.K., Kesavamoorthy, R., Bhattacharya, S., Panigrahi, B.K. and Nair, K.G.M., Materials Science and Engineering B 128, 201 (2006).Google Scholar
10. Ali, Atif Mossad, Journal of Non-Crystalline Solids 352, 3126 (2006).Google Scholar