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Optical Properties of RF-Sputtered a-SiGe:H:O Alloys

Published online by Cambridge University Press:  26 February 2011

J. M. T. Pereira ,
P. K. Banerjee  and
S. S. Mitra
J. M. T. Pereira
Affiliation:
University of Rhode Island, Dept. of Electrical Engineering Kingston, R.I. 02881
P. K. Banerjee
Affiliation:
University of Rhode Island, Dept. of Electrical Engineering Kingston, R.I. 02881
S. S. Mitra
Affiliation:
University of Rhode Island, Dept. of Electrical Engineering Kingston, R.I. 02881
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Abstract

Amorphous thin films of SixGe1-x:O (x = 0.70) were prepared by RF-sputtering at several substrate temperatures. The structural properties of these films were studied by IR spectroscopy and revealed features characteristic of hydrogen and/or oxygen bonded to silicon. The optical constants (n,k) were determined from reflection and transmission measurements at near-normal incidence for photon energies in the range of 1 eV and 2.6 eV. The optical gap was derived from the Taue plot and correlated with the composition of the samples. The increase of hydrogen and/or oxygen decreases the value of the refractive index and increases the optical gap.

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Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 575
Copyright
Copyright © Materials Research Society 1987

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References

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