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Optical Properties of Novel Vibronic Bands in Electron-Irradiated Tin Doped Silicon

Published online by Cambridge University Press:  25 February 2011

J. H. Svensson ,
B. Monemar  and
B. G. Svensson
J. H. Svensson
Affiliation:
Department of Physics and Measurement Technology, Institute of Technology, Linköping University, S-581 83 Linköping, Sweden
B. Monemar
Affiliation:
Department of Physics and Measurement Technology, Institute of Technology, Linköping University, S-581 83 Linköping, Sweden
B. G. Svensson
Affiliation:
Department of Solid State Electronics, The Royal Institute of Technology, P. O. Box 1298, S-164 28 Kista, Sweden
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Abstract

The optical absorption of two new electronic transitions in silicon doped with tin has been investigated. At low temperatures two no-phonon lines are observed at 2755.3 and 4112.2 cm-1, each with strong coupling to a single quasi-localized vibration in the excited electronic state. These vibrations have quantum energies of 69.6 and 70.2 cm-1, respectively. At higher temperatures coupling to thermally excited vibrational states in the ground electronic states is observed for both lines. The transition with the no-phonon line at 4112.2 cm-1 has been studied in detail and is found to be well described using the adiabatic and Condon approximations. The optical properties of the two transitions are found to be quite similar. Moreover the relative intensities of the two lines are found to be dependent on the optical excitation conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 261
Copyright
Copyright © Materials Research Society 1990

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