Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-25T17:51:06.453Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical Properties of Multiple, Delta-doped Si:B/Si Layers

Published online by Cambridge University Press:  01 February 2011

Han-Yun Chang ,
Eun-Kyu Lee ,
Boris V. Kamenev ,
Jean-Marc Baribeau ,
David J. Lockwood  and
Leonid Tsybeskov
Han-Yun Chang
Affiliation:
[email protected], New Jersey Institute of Technology, Electrical and Computer Engineering, University Heights, Newark, NJ, 07102-1982, United States
Eun-Kyu Lee
Affiliation:
[email protected], New Jersey Institute of Technology, Department of Electrical and Computer Engineering, University Heights, Newark, NJ, 07102-1982, United States
Boris V. Kamenev
Affiliation:
[email protected], New Jersey Institute of Technology, Department of Electrical and Computer Engineering, University Heights, Newark, NJ, 07102-1982, United States
Jean-Marc Baribeau
Affiliation:
[email protected], National Research Council Canada (NRC), Institute for Microstructural Sciences (IMS), Ottawa, K1A 0R6, Canada
David J. Lockwood
Affiliation:
[email protected], National Research Council Canada (NRC), Institute for Microstructural Sciences (IMS), Ottawa, K1A 0R6, Canada
Leonid Tsybeskov
Affiliation:
[email protected], New Jersey Institute of Technology, Department of Electrical and Computer Engineering, University Heights, Newark, NJ, 07102-1982, United States
Get access

Abstract

Reliable fabrication of high-speed, delta-doped transistors and better understanding of two-dimensional metal-insulator transitions can be achieved using silicon molecular beam epitaxy (MBE). However, this fabrication technique should be performed with care, avoiding dopant segregation on epitaxial Si surfaces and improving the doping efficiency. Here we report comprehensive structural and optical investigations of MBE-grown Si/delta-doped Si:B multilayer structures. Measurements of Auger electron spectroscopy, Raman scattering, optical reflection and photoluminescence are performed. Our results indicate nearly metallic conductivity at room temperature with metal-insulator phase transition near T ∼100 K. In contrast to recently reported data, no enhancement of photoluminescence at room temperature is found. Occasionally, a few samples in specific areas exhibit strong photoluminescence at 1.4-1.6 micron attributed to structural defects, most likely due to B segregation.

Keywords

luminescencedopantmolecular beam epitaxy (MBE)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 958: Symposium L – Group IV Semiconductor Nanostructures—2006 , 2006 , 0958-L10-23
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Thompson, P.E. and Bennett, J., Mat. Sci. and Eng. B 89, 211 (2000).10.1016/S0921-5107(01)00855-8Google Scholar
2. Wu, S. L., Carns, T. K., Wang, S. J., and Wang, K. L., Appl. Phys. Lett. 63, 1363 (1993).10.1063/1.110769Google Scholar
3. Zeindl, H. P., Bullemer, B., Eisele, I., and Tempel, G., J. Electrochem. Soc. 136, 1129 (1989).Google Scholar
4. de Frésart, E., Wang, K. L., and Rhee, S. S., Appl. Phys. Letters 53, 48 (1988).10.1063/1.100122Google Scholar
5. Milosavljevic, M., Shao, G., Lourenco, M. A., Gwilliam, R. M., and Homewood, K. P., J. Appl. Phys. 97, 073512 (2005).10.1063/1.1866492Google Scholar
6. Temple, P. A. and Hathaway, C. E., Phys. Rev. B 7, 3685 (1973).10.1103/PhysRevB.7.3685Google Scholar
7. Zwick, A. and Carles, R., Phys. Rev. B 48, 6024 (1993).10.1103/PhysRevB.48.6024Google Scholar
8. Zhang, P. X., Mitchell, I. V., Tong, B. Y., Schultz, P. J., Lockwood, D. J., Phys. Rev. B 50, 17080 (1994).Google Scholar
9. Buyanova, I. A., Chen, W. M., Henry, A., Ni, W.-X., Hansson, G. V., and Monemar, B., Phys. Rev. B 52, 12006 (1995).10.1103/PhysRevB.52.12006Google Scholar
10. Sekiguchi, T. and Sumino, K., J. of Appl. Phys. 79, 3253 (1996).Google Scholar