Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-25T17:23:46.304Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical Properties of Mg-GaN, GaN/AlGaN SCH structures, and GaN on ZnO Substrates

Published online by Cambridge University Press:  21 February 2011

H. Morkoç ,
W. Kim ,
Ö. Aktas ,
A. Salvador ,
A. Botchkarev ,
D. C. Reynolds ,
D. C. Look ,
M. Smith ,
G. D. Chen  and
J. Y. Lin
...Show all authors
H. Morkoç
Affiliation:
On sabbatical leave at Wright Laboratory on a University Resident Research Program funded by AFOSR.
W. Kim
Affiliation:
University of Illinois, Coordinated Science Laboratory and Materials Research Laboratory, 104 South Goodwin Avenue, Urbana, IL 61801
Ö. Aktas
Affiliation:
University of Illinois, Coordinated Science Laboratory and Materials Research Laboratory, 104 South Goodwin Avenue, Urbana, IL 61801
A. Salvador
Affiliation:
University of Illinois, Coordinated Science Laboratory and Materials Research Laboratory, 104 South Goodwin Avenue, Urbana, IL 61801
A. Botchkarev
Affiliation:
University of Illinois, Coordinated Science Laboratory and Materials Research Laboratory, 104 South Goodwin Avenue, Urbana, IL 61801
D. C. Reynolds
Affiliation:
University Research Center, Wright State University, Dayton Ohio 45435
D. C. Look
Affiliation:
University Research Center, Wright State University, Dayton Ohio 45435
M. Smith
Affiliation:
Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601
G. D. Chen
Affiliation:
Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601
J. Y. Lin
Affiliation:
Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601
H. X. Jiang
Affiliation:
Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601
T.J. Schmidt
Affiliation:
Dept. of Physics, Oklahoma State University, Stillwater, OK 74078-0444
X.H. Yang
Affiliation:
Dept. of Physics, Oklahoma State University, Stillwater, OK 74078-0444
W. Shan
Affiliation:
Dept. of Physics, Oklahoma State University, Stillwater, OK 74078-0444
J.J. Song
Affiliation:
Dept. of Physics, Oklahoma State University, Stillwater, OK 74078-0444
B. Goldenberg
Affiliation:
Honeywell Technology Center, 4B75, 1201 State Highway 55 Plymouth MN 55441-4799
C. W. Litton
Affiliation:
Electronic Research Directorate, WL/ELR, Building 620 Wright Patterson AFB, OH 45433
K. Evans
Affiliation:
Electronic Research Directorate, WL/ELR, Building 620 Wright Patterson AFB, OH 45433
Get access

Abstract

GaN films and GaN/AlGaN heterostructures have been gro wn by MBE. GaN films doped with varying levels of Mg indicate effective mass acceptor at low doping concentrations, as determined from strong photoluminescence emission at about 380 nm. As the Mg concentration is increased the photoluminescence emission line red shifts considerably, indicating the formation of Mg-related or induced complexes whose lifetimes are relatively short. GaN/AlGaN separate confinement heterostructures grown on sapphire show strong near ultraviolet stimulated emission at room temperature in a side-pumping configuration. The pumping threshold for stimulated emission at room temperature was found to be ∼90 kW/cm2. Initial GaN films grown on ZnO substrates show the A exciton in low temperature photoluminescence. ZnO is being considered for nitride growth because of its stacking order and close lattice match.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 527
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

References:

1 See, for example, See Transactions of the First International High Temperature Electronics Conference, June 10-20, Albuquerque, New Mexico, U.S.A., 1991.Google Scholar
2 Morkoç, H., Strite, S., Gao, G.B., Lin, M.E., Sverdlov, B., and Burns, M., J. Appl. Phys. Rev. 76, 1363–1398 (1994). S. Strite and H. Morkoç, “GaN, AIN anil InN: A Review,” J. Vac. Sci. & Technol B, Vol. 10(4), pp. 1237-1266, 1992.Google Scholar
3 See, for example, Zook, D., and Goldenberg, B., in Proceedings of International Conference on Silicon Carbide and Related Materials, Nov. 1-3, 1993, Washington, DC, U.S.A., Eds. Spencer, M.G., Davaty, R.P., Edmond, J.A., Khan, M.A., Kaplan, R., and Rahman, M., Institute of Physics Conference Series, Number 137, 1994.Google Scholar
4 Lin, M.E., Strite, S., and Morkoç, H., in The Encyclopedia of Advanced Materials, Eds. Bloor, D., Fleming, M.C., Brook, R.I., Mahajan, S., Senior Ed. Cahn, R.W., pp. 79–86, Pergamon Press, 1994.Google Scholar
5 Nakamura, S., Senoh, M., Isawa, N., and Nagahama, S., Jpn. J. Appl. Phys. 34, Part 2, No. 10B, Oct 15 (1995) issue (in press); (c) S. Nakamura, M. Senoh, N. Isawa, and S. Nagahama, Jpn. J. Appl. Phys. 34, Part 2, No. 7A, L795 (1995); (d) S. Nakamura, M. Senoh, N. Isawa, and S. Nagahama, Jpn. J. Appl. Phys. 34, Part 2, No. 7A, L797 (1995).Google Scholar
6 Akasaki, I. and Amano, H., Mater. Res. Soc. Fall Meeting, Boston, MA, U.S.A., 1991.Google Scholar
7 Nakamura, S., Technical Digest of the IEEE Electron Devices Meeting, pp. 567–570, Dec. 11-14, 1994, San Fransisco, CA, U.S.A.Google Scholar
8 Eason, D.B., Yu, Z., Hughes, W.C., Roland, W.H., Boney, C., Cook, J.W. Jr., Schetzina, J.F., Cantwel, G.l, and Harsh, W.C., Appl. Phys. Lett. 65, 115 (1995).Google Scholar
9 Hoemecke, M.E., Bula, R.J., Tibbits, T.W., HortScience 27, 427 (1992).Google Scholar
10 Werner, K., IEEE Spectrum 31, 30 (1994).Google Scholar
11 Crawford, M. G., IEEE Circuits & Devices Mag. 8, 24 (1992)Google Scholar
12 Engelmann, R., IEEE LEOS News Lett. 8, 6 (1994).Google Scholar
13 Morkoç, H. and Mohammad, S.N., Science 267, 51 (1995).Google Scholar
14 Engelmann, R., 3rd Progress Report to DOE Contract No. DE-AC01-89-CE23821, 17 June, 1994.Google Scholar
15 See, for example, (a) Nakamura, S., Research Concerning InGaN High-Brightness Blue LEDs (published in Japanese), Corporate Report, 1994; (b) S. Nakamura, M. Senoh, N. Isawa, and S. Nagahama, Jpn. J. Appl. Phys. 34, Part 2, No. 10B, Oct 15 (1995) issue (in press); (c) S. Nakamura, M. Senoh, N. Isawa, and S. Nagahama, Jpn. J. Appl. Phys. 34, Part 2, No. 7 A, L795 (1995); (d) S. Nakamura, M. Senoh, N. Isawa, and S. Nagahama, Jpn. J. Appl. Phys. 34, Part 2, No. 7A, L797 (1995)Google Scholar
16 Schmidt, T. J., Yang, X. H., Shan, W., Song, J. J., Salvador, A., Kim, W., Aktas, Ö., Botchkarev, A., and Morkoç, H., Appl. Phys. Letts, pending,Google Scholar
17 Yang, X.H., Schmidt, T., Shan, W., Song, J.J., and Goldenberg, B., Appl. Phys. Lett. 66, 1(1995).Google Scholar
18 Smith, M., Chen, G. D., Lin, J. Y., Jiang, H. X., Salvador, A., Kim, W., Aktas, Ö., Botchkarev, A., Morkoç, H., and Goldenberg, B., , Appl. Phys. Letts, pending,Google Scholar
19 Sitar, Z., Paisley, M. J., Yan, B., Davis, R. F., Mat. Res. Soc. Symp. Proc. 162, 537 (1990).Google Scholar
20 Basu, S. N., Lei, T., Moustakas, T. D., J. Mat. Res. 9, 2370 (1994).Google Scholar
21 Smith, D., Chandrasekhar, D., Sverdlov, B. N., Botchkarev, A. E., and Morkoç, H., 2nd Workshop on GaN and Related Compounds in St. Louis, October 1994 (unpublished); Appl. Phys. Lett., in press.Google Scholar
22 Iyer, S., Morkoç, H., Zabel, H., and Otsuka, N., Comments Cond. Mat. Phys 15, 1 (1989).Google Scholar
23 Martin, G. M., Sverdlov, S. V. and Smith, D. J., Appl. Phys. Letts. October 2, 1995.Google Scholar
24 Mohammad, S. N. and Morko§, H., Progress in Quantum Electronics, in press.Google Scholar
25 Mohammad, S. N., Salvador, A., and Morkoç, H., Proc. IEEE in press, October 1995.Google Scholar
26 Reynolds, D. C. and Look, D. C., Kim, W., Aktas, Ö., Botchkarev, A., Salvador, A., Morkoç, H., and Talwar, D. N., Appl. Phys. Lett, pending.Google Scholar
27 Salvador, A., Liu, G., Kim, W., Aktas, Ö., Botchkarev, A. and Morkoç, H., Appl. Phys. Lett, pending.Google Scholar
28 Amano, H., Hiramatsu, K. and Akasaki, I., Jpn. J. Appl. Phys. 27, L1384 (1988).Google Scholar