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Optical Properties of MBE Grown Cubic AlGaN Epilayers and AlGaN/GaN Quantum Well Structures

Published online by Cambridge University Press:  17 March 2011

D.J. As ,
T. Frey ,
M. Bartels ,
A. Khartchenko ,
D. Schikora ,
K. Lischka ,
R. Goldhahn  and
S. Shokhovets
D.J. As
Affiliation:
Universität Paderborn, FB-6 Physik, Warburger Strasse 100 D-33095 Paderborn, Germany, [email protected]
T. Frey
Affiliation:
Universität Paderborn, FB-6 Physik, Warburger Strasse 100 D-33095 Paderborn, Germany
M. Bartels
Affiliation:
Universität Paderborn, FB-6 Physik, Warburger Strasse 100 D-33095 Paderborn, Germany
A. Khartchenko
Affiliation:
Universität Paderborn, FB-6 Physik, Warburger Strasse 100 D-33095 Paderborn, Germany
D. Schikora
Affiliation:
Universität Paderborn, FB-6 Physik, Warburger Strasse 100 D-33095 Paderborn, Germany
K. Lischka
Affiliation:
Universität Paderborn, FB-6 Physik, Warburger Strasse 100 D-33095 Paderborn, Germany
R. Goldhahn
Affiliation:
TU Ilmenau, Institut für Physik, PF 100565, D-98684 Ilmenau, Germany
S. Shokhovets
Affiliation:
TU Ilmenau, Institut für Physik, PF 100565, D-98684 Ilmenau, Germany
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Abstract

Cubic AlyGa1−yN/GaN heterostructures on GaAs(001) substrates were grown by radio-frequency plasma-assisted molecular beam epitaxy. High resolution X-ray diffraction, spectroscopic ellipsometry and cathodoluminescence were used to characterize the structural and optical properties of the alloy epilayers. X-ray diffraction reciprocal space maps demonstrate the good crystal quality of the cubic AlyGa1−yN films. Both SE as well as room temperature CL of the AlyGa1−yN epilayer show a linear increase of the band gap with increasing Al-content. A pseudomorphically strained cubic 10 × (2.4 nm GaN/ 4.8 nm Al0.12Ga0.88N) multi-quantum well (MQW) structure has been realized. Cathodoluminescence clearly demonstrates strong radiative recombination due to quantized states in the GaN well layer at a photon energy of 3.323 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G5.9
Copyright
Copyright © Materials Research Society 2001

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References

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