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Optical Properties of Laser Induced Heavily Doped Silicon Layers

Published online by Cambridge University Press:  22 February 2011

A. Slaoui ,
E. Fogarassy ,
P. Siffert ,
J.F. Morhange  and
M. Balkanski
A. Slaoui
Affiliation:
Centre De Recherches Nucleaires, Laboratoire Phase, F–67037 Strasbourg Cedex
E. Fogarassy
Affiliation:
Centre De Recherches Nucleaires, Laboratoire Phase, F–67037 Strasbourg Cedex
P. Siffert
Affiliation:
Centre De Recherches Nucleaires, Laboratoire Phase, F–67037 Strasbourg Cedex
J.F. Morhange
Affiliation:
Universite Pierre Et Marie Curie, Laboratoire de Physique des Solides, F–75230 Paris Cedex
M. Balkanski
Affiliation:
Universite Pierre Et Marie Curie, Laboratoire de Physique des Solides, F–75230 Paris Cedex
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Abstract

The goal of this paper is to investigate optical properties of heavily doped silicon, performed by laser annealing of implanted layers.

The optical properties were investigated by using U.V. and visible light (between 200 and 500 nm)reflectance and Raman spectrometry measurements. The experimental observations have been correlated with the contribution of the supersaturated solid solution of arsenic in the silicon lattice. Furthermore,the absorption coefficent of these layers has been deduced from ellipsometry measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 159
Copyright
Copyright © Materials Research Society 1984

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References

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