Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-19T08:22:20.375Z Has data issue: false hasContentIssue false
  • English
  • Français

The Optical Properties of InGaAs(P)/InP Under Group V Sublattice Two-phase Interdiffusion

Published online by Cambridge University Press:  10 February 2011

E. Herbert Li ,
Joseph Micallef  and
W. C. Shui
E. Herbert Li
Affiliation:
University of Hong Kong, Dept. of EEE, Pokfulam Road, Hong Kong, [email protected]
Joseph Micallef
Affiliation:
University of Malta, Department of Microelectronics, Malta
W. C. Shui
Affiliation:
Hong Kong Baptist University, Department of Mathematics, Hong Kong.
Get access

Abstract

Using the fundamental transition state, we will investigate the two phase interdiffusion of group V sublattice in a strained lattice matched InGaAs/InP quantum well (QW) structures. The model employs three parameters namely the diffusion coefficients in the barrier (Db)and in the well (Dw)and the concentration ratio (k) of the diffused species at the heterstructure. The QW model includes the effects of strain and the exciton. A pseudo time dependent calculation is also considered and results are fitted to the reported experimental data. These parameters which characterize the diffusion mechanism can be measure to form a better understanding of the interdiffsion process for group V sublattice.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 289
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Deri, R. J., Kapon, E., Bhat, R., Seto, M. and Kash, K.: Apl. Phys. Lett. 54, 1737 (1989)Google Scholar
2 Bar-Joesph, I., Klingshirn, C., Miller, D. A. B., Chemla, D. S., Koren, U. and Miller, B. I.: Appl. Phys. Lett. 50, 1010 (1987)Google Scholar
3 Koren, U.. Miller, B. I., Koch, T. L., Eisenstein, G., Tucker, R. S., Bar-Joseph, I. and Chemla, D. S.: Appl. Phys. Lett. 51, 1132 (1987)Google Scholar
4 Li, E. Herbert, Shiu, W. C., Micallef, J., Issac Ng, Jpn. J. Appl. Phys., 34, 1778–1783, (1995).Google Scholar
5 Weiss, B. L., Li, E.Herbert, Micallef, J., J. Appl. Phys, 73, 11, (1993).Google Scholar
6 Osbourn, G. C., J. Appl. Pgys. 53, 1586 (1982)Google Scholar
7 Nakashima, K., Kawagtchi, Y., Kawamura, Y., Imamura, Y.. and asahi, h., appl. Phys. Lett. 52, 1383 (1988)Google Scholar
8 Fujii, T., Sugawara, M., Yamazaki, S. and Nakajima, K., J. Crys. G. 105, 348-352 (1990)Google Scholar
9 Pearsall, T. P., es,. GalnAsp Alloy Semnicinductors (wiley, New York, 1982), p. 295.Google Scholar
10 Schwarz, S. A., Mei, P., Venkatesen, T., Bhat, R., Hwang, D. N., Schwarz, C. L., Koza, N., Nazar, L. and Skromme, B. J., Appl. Phys. Lett. 53, 1051 (1988)Google Scholar
11 Osbourn, G. C., J. Appl. Phys. 53, 1586 (1982).Google Scholar
12 People, R., Appl. Phys. Lett. 50, 1604 (1987).Google Scholar
13 BenDaniel, D. J. and Duke, C. B., Phys. Rev. 152, 682 (1966)Google Scholar
14 Bastard, G., Brum, J. B., and Ferreira, R., in Solid State Physics- Advances in Research and Applications, edited by Ehrenreich, H. and Turnbull, D. (Academic, New York, 1991), Vol. 44, p. 232.Google Scholar
15 Mukai, K., Sugawara, M., and Yamazaki, S., Physical Review B, 50(4), 2273–2282, (1994).Google Scholar
16 Panish, M. B., Temkin, H., Hamm, R. A., and Chu, S. N. G., Appl. Phys. Lett. 49, 164 (1986)Google Scholar
17 Sauer, R., Harris, T. D., and Tsang, W.T., Phys. Rev. B 34, 9023 (1986)Google Scholar
18 Gershoni, David and Temkin, Henry, Journal of Lumin. 44, 381 (1989)Google Scholar
19 Tsang, W. T. and Schubert, E. F., Appl. Phys. Lett. 49, 220 (1986)Google Scholar
20 O, Madelung. DST Semiconductors: Group IV Elements and III-V Compounds, Springererlag, Berlin, (1991).Google Scholar
21 P., Lawaetz Physical Review B, 4(10), 3460–3467, (1971)Google Scholar
22 A., Qteishand R.J., Needs Physical Review B, 45(3), 1317–1326, (1992)Google Scholar
23 Julien, F. H., Bradley, M. A., Rao, E. V. K., Razeghi, M., and Gold-stein, L, Opt. Quantum Electron. 23, S847 (1991).Google Scholar