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Optical Properties of i-Layers as a Function of Growth Rate in Correlation to the Performance of a-Si:H Solar Cells

Published online by Cambridge University Press:  01 February 2011

Keda Wang ,
Jessica M. Owens ,
Jennifer Weinberg-Wolf ,
Daxing Han  and
Lynn Gedvilas
Keda Wang
Affiliation:
Department of Physics & Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599-3255
Jessica M. Owens
Affiliation:
Department of Physics & Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599-3255
Jennifer Weinberg-Wolf
Affiliation:
Department of Physics & Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599-3255
Daxing Han
Affiliation:
Department of Physics & Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599-3255
Lynn Gedvilas
Affiliation:
National Renewable Energy Laboratory, Golden, CO Gautam Ganguly, BPSolar, 3600, LaGrange Parkway, Toano, VA 23168
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Abstract

a-Si:H intrinsic films and their solar cells were prepared by DC-PECVD with growth rates of 1, 3, and 10 Å/s. Raman, IR, and PL spectroscopies were used to study the i-layer properties in relation to the solar cell performance. Raman shows an identical TO mode for all the samples, which indicates the local silicon-bonding configuration does not change with the growth rate from 1 to 10 Å/s. IR results show that the hydrogen bonding configuration is monohydride (Si-H) dominated, and the hydrogen content obtained from the 630 cm-1 wagging mode is 12-14 at.%. Surprisingly, a very small absorption strength for the stretching 2000-2100 cm-1 mode was found for some samples deposited at the higher growth rates (3, 10 Å/s). For these same samples, the PL spectra exhibit a red shift. Both the IR and PL results might be related to the same microstructures formed at high growth rates. We found that although the properties of the i-layer varied as the growth rate increased from 1 to 10 Å/s, the performances of the cells were comparable (within about 4%).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A6.4
Copyright
Copyright © Materials Research Society 2002

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References

1. Yang, J., Sugiyama, S., and Guha, S., Amorphous and Heterogeneous Silicon Thin Films, edited by Schropp, R., Branz, H.M., Hack, M., Shimizu, I., and Wagner, S., Mat. Res. Soc. Symp. Proc. 507, 157 (1998).Google Scholar
2. Wang, Q, Iwaniczko, E., Yang, J., Lord, K., and Guha, S., Amorphous and Heterogeneous Silicon Thin Films, edited by Stutzmann, M., Boyce, J.B., Cohen, J.D., Collins, R.W. and Hanna, J., Mat. Res. Soc. Symp. Proc. 664, A7.5 (2001).Google Scholar
3. Han, Daxing, Yue, Guozhen, Wang, Keda, Baugh, Jonathan, Wu, Yue, Xu, Yueqin, and Wang, Qi, Appl.Phys. Lett. 80, 40–42 (2002).Google Scholar
4. Roca, P. Cabarrocas, I, J. Non-Cryst. Solids 164-166, 37 (1993).10.1016/0022-3093(93)90486-HGoogle Scholar
5. Kessels, W.M.M., Van De Sanden, M.C.M., Severens, R.J., Ijzendoorn, L.J.Van, and Schram, D.C., Amorphous and Heterogeneous Silicon Thin Films, edited by Schropp, R., Branz, H.M., Hack, M., Shimizu, I., and Wagner, S., Mat. Res. Soc. Symp. Proc. 507, 529 (1998).Google Scholar
6. Carlson, D. E., Ganguly, G., Lin, G., Gleaton, M., Bennett, M. and Arya, R. R.; MRS Symp. Proc. 664, A11.4 (2001).Google Scholar
7. Arya, R., Catalano, A., Bennett, M., Newton, J., Fieselman, B., Yang, L., Li, Y.M. and D'Aiello, R., Proc. 11th EC PVSEC, 1992, p-199; M. Bennett, K. Rajan and K. Kritikson, Conf. Rec. of the 23rd IEEE PVSC, 1993, p. 845; L. Yang and L. Chen, APL 63, 400 (1993).Google Scholar
8. Langford, A. A., Fleet, M. L., Nelson, B. P., Lanford, W. A. and Maley, N., Phys. Rev. B45, 13367 (1992).10.1103/PhysRevB.45.13367Google Scholar
9. Manfredotti, C., Fizzotti, F., Boero, M., Pastorino, P., Polesello, P. and Vittone, E., Phys. Rev. B50, 18047 (1994).Google Scholar
10. Beyer, W. and ABO Ghazala, M. S., Amorphous and Heterogeneous Silicon Thin Films, edited by Schropp, R., Branz, H.M., Hack, M., Shimizu, I., and Wagner, S., Mat. Res. Soc. Symp. Proc. 507, 601 (1998).Google Scholar
11. Street, R.A., Hydrogenated Amorphous Silicon, (Cambridge University Press, Cambridge, UK, 1991), chaps. 3 and 8.Google Scholar