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Optical Properties of II-VI Semiconductor Doped Glass

Published online by Cambridge University Press:  21 February 2011

P. D. Persans ,
An Tu ,
M. Lewis ,
T. Driscoll  and
R. Redwing
P. D. Persans
Affiliation:
Physics Department and Center for Integrated Electronics Rensselaer Polytechnic Institute, Troy NY 12180-3590
An Tu
Affiliation:
Physics Department and Center for Integrated Electronics Rensselaer Polytechnic Institute, Troy NY 12180-3590
M. Lewis
Affiliation:
Physics Department and Center for Integrated Electronics Rensselaer Polytechnic Institute, Troy NY 12180-3590
T. Driscoll
Affiliation:
Physics Department and Center for Integrated Electronics Rensselaer Polytechnic Institute, Troy NY 12180-3590
R. Redwing
Affiliation:
Physics Department and Center for Integrated Electronics Rensselaer Polytechnic Institute, Troy NY 12180-3590
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Abstract

We review structural and optical properties of CdSxSe1−x semiconductor nanoparticles embedded in an insulating glass matrix. Vibrational Raman scattering and x-ray diffraction can be used to determine the composition of the crystallites for all X and sizes. Debye-Scherrer broadening of x-ray diffraction peaks from the crystallites yields an average grain size in the semiconductor crystallites of 60Å for the series studied here. Small angle x-ray scattering reveals that the average particle diameter is close to 120Å. Optical absorption, photoluminescence, and photomodulated absorption spectra are interpreted within a spherical quantum well model. Electron-phonon coupling and size distribution effects on the spectra are also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 164: Symposium H – Materials Issues in Microcrystalline Semiconductors , 1989 , 105
Copyright
Copyright © Materials Research Society 1990

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