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Optical Properties of II-IV-N2 Semiconductors

Published online by Cambridge University Press:  01 February 2011

John Muth
Affiliation:
Department of Electrical and Computer Engineering, NC State University, Raleigh, NC 27695
Ailing Cai
Affiliation:
Department of Electrical and Computer Engineering, NC State University, Raleigh, NC 27695
Andrei Osinsky
Affiliation:
SVT Associates, Eden Prairie, Minnesota, 55344
Henry Everitt
Affiliation:
Physics Department, Duke University, Durham, NC 27708, and Army Research Office, RTP, NC 27709
Ben Cook
Affiliation:
Department of Mathematics, University of California - Los Angeles, Los Angeles, CA 90095
Ivan Avrutsky
Affiliation:
Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI, 48202
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Abstract

Recently, wide band gap II-IV-N2 semiconductors such as ZnSiN2, and ZnGeN2 and ZnSiGeN2 have been synthesized, but very little is known about their band structure, optical properties, or electronic properties. Bulk crystals are hard to synthesize because high temperatures and pressures are required. The success in growing II-IV-N2 films epitaxially by MOCVD creates interesting opportunities. The crystal structure of II-IV-N2 compounds is orthorhombic, and when grown on r-plane sapphire can provide a suitable template for GaN growth. Optical transmission studies of the band edge of ZnSiN2 and ZnSiGeN2 with varying Si and Ge percentages were conducted. The indirect nature of the band gap was investigated, and prism coupling was used to obtain the refractive indices in the visible and NIR portion of the spectrum. Although the crystal symmetry was orthorhombic, the refractive indices indicated uniaxial optical properties. Optical loss measurements indicate that the films are suitable for waveguides and novel devices based on birefringent optical effects.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Limpijumnong, S., Rashkeev, S. N., and Lambrecht, W. R. L., MRS Internet Journal of Nitride Semiconductor Research 4, G6.11 (1999).Google Scholar
2. Misaki, T., Wu, X., Wakahara, A., and Yoshida, A., in Theoretical analysis of Multinary Nitride Semiconductors by Density Functional Theory, Nagoya, 2000 (The Institute of Pure and Applied Physics 6–9–6 Shinbashi, Minato-ku, Tokyo 105–0004, Japan), p. 685688.Google Scholar
3. Zhu, L. D., Maruska, P. H., Norris, P. E., Yip, P. W., and Bouthillette, L. O., MRS Internet Journal of Nitride Semiconductor Research 4 (1999).Google Scholar
4. Osinsky, A., Fuflyigin, V., Zhu, L. D., Goulakov, A. B., Graff, J. W., and Schubert, E. F., Proceedings of the 2000 IEEE/Cornell Conference on High Performance Devices, 2000, p. 168.Google Scholar
5. Pearton, S. J., Overberg, M. E., Abernathy, C. R., Theodoropoulou, N. A., Hebard, A. F., Chu, S. N. G., Osinsky, A., Fuflyigin, V., Zhu, L. D., Polyakov, A.Y., Wilson, R. G., Journal of Applied Physics 92, 2047 (2002)Google Scholar
6. Viennois, R., Taliercio, T., Potin, V., Errebbahi, A., Gil, B., Charar, S., Haidoux, A., and Tedenac, J. C., Materials Science and Engineering B-Solid State Materials for Advanced Technology 82, 4549 (2001).Google Scholar
7. Mintairov, A., Merz, J., Osinsky, A., Fuflyigin, V., and Zhu, L. D., Applied Physics Letters. 76, 25172519 (2000).Google Scholar
8. Rams, J., Tejeda, A., and Cabrera, J. M., Journal of Applied Physics. 82, 994997 (1997).Google Scholar
9. Cook, B. P., Everitt, H. O., Avrusky, I., Osinsky, A., Cai, A. L., and Muth, J.F. “Refractive indices of ZnSiN2 on r-plane sapphire”, to be published Appl. Phys. Lett.Google Scholar