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OPTICAL PROPERTIES OF Ge NANOWIRES GROWN ON SILICON (100) AND (111) SUBSTRATES

Published online by Cambridge University Press:  01 February 2011

V. Sharma ,
B. V. Kamenev ,
L. Tsybeskov  and
T. I. Kamins
V. Sharma
Affiliation:
Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102
B. V. Kamenev
Affiliation:
Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102
L. Tsybeskov
Affiliation:
Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102
T. I. Kamins
Affiliation:
Quantum Science Research, Hewlett-Packard Laboratories, Palo Alto, California 94304
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Abstract

In this paper, we report Raman Scattering (RS) and photoluminescence (PL) measurements of Ge nanowires (NWs) grown via vapor-liquid-solid (VLS) using chemical vapor deposition silicon substrates consisting of (100) and (111) crystallographic orientations. Ge NWs grown are ∼40 nm in diameter, approximately a micrometer in length, and a sharp narrow Raman peak at ∼300 cm−1 indicates single crystal quality. An absence of SiGe peak in the Raman spectra indicates that SiGe interdiffusion is insignificant for the NW volume. Low temperature PL-intensity-dependence spectra indicate that the observed emission originates at the Ge NW – Si substrate interface, where SiGe intermixing has been detected. This interface is formed differently for (111) and (100) oriented Si substrates due to the <111> preferential growth direction of Ge NWs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 832: Symposium F – Group IV Semiconductor Nanostructures , 2004 , F7.20
Copyright
Copyright © Materials Research Society 2005

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References

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