Hostname: page-component-6bf8c574d5-8gtf8 Total loading time: 0 Render date: 2025-02-20T14:53:29.860Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical Properties of Al0.70Ga0.30As:Er,Yb

Published online by Cambridge University Press:  11 February 2011

Shin-ichiro Uekusa ,
Isao Tanaka  and
Tomoyuki. Arai
Shin-ichiro Uekusa
Affiliation:
Department of Electrical and Electronic Engineering, Meiji University, 1–1–1 Higashi-mita, Tama-ku, Kawasaki, Kanagawa, 214–8571, Japan
Isao Tanaka
Affiliation:
Department of Electrical and Electronic Engineering, Meiji University, 1–1–1 Higashi-mita, Tama-ku, Kawasaki, Kanagawa, 214–8571, Japan
Tomoyuki. Arai
Affiliation:
Department of Electrical and Electronic Engineering, Meiji University, 1–1–1 Higashi-mita, Tama-ku, Kawasaki, Kanagawa, 214–8571, Japan
Get access

Abstract

Erbium (Er) ions were co-implanted with ytterbium (Yb) into Al0.70Ga0.30As substrates and we realized an increase in the intensity of Er intra-4f-shell luminescence. The photoluminescence (PL) intensity of Er-related dominant peak (1538.2nm) was enhanced by co-implanted Yb. The thermal quenching was improved. PL intensity of Yb-related emission was decreased. We studied the transfer energy and the optical sensitization of Yb ions co-implanted with Er ions in Al0.70Ga0.30As. Energy transfers from 2F5/2 (the first excited state) → 2F7/2 (the ground state) of Yb3+ to 4I13/2 (the first excited state) → 4I15/2 (the ground state) of Er3+ were observed by PL excitation (PLE) and selectively excited PL (SPL).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M8.29
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCE

1. Katsumata, H., Uekusa, S., Majima, A. and Kumagai, M., J. Appl. phys. 77, 1881 (1995)Google Scholar
2. Katsumata, H., Uekusa, S. and Sai, H., J. Appl. phys. 80, 2383 (1996)Google Scholar
3. Uekusa, S., Ohshima, T., Majima, A. and Kumagai, M., Proc. 1994 International Workshop on Electroluminescence, Beijing 279–283 (1994)Google Scholar
4. Uekusa, S., Wakutani, M., Saito, M., Kumagai, M., Mat. Res. Soc. Symp. Proc. Vol. 484 595 (1998)Google Scholar
5. Uekusa, S., Uchiya, K., Wakutani, M., Kumagai, M., N.I.M.B. 148 502 (1999)Google Scholar
6. Uekusa, S., Uchiya, K., Kumagai, M., Physica B Condenced Matter, North-Holland Vol. 273 778 (1999)Google Scholar