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Optical Properties and Electroluminescence of Ordered and Disordered ALAS/GAAS Superlattices

Published online by Cambridge University Press:  22 February 2011

D. J. Arent ,
R. G. Alonso ,
G. S. Horner ,
A. E. Kibbler ,
J. M. Olson ,
X. Yin ,
M. C. Delong ,
A. J. Springthorpe ,
A. Majeed  and
D. J. Mowbray
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D. J. Arent
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd. Golden, CO 80401
R. G. Alonso
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd. Golden, CO 80401
G. S. Horner
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd. Golden, CO 80401
A. E. Kibbler
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd. Golden, CO 80401
J. M. Olson
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd. Golden, CO 80401
X. Yin
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
M. C. Delong
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
A. J. Springthorpe
Affiliation:
Bell Northern Research, Ltd. P.O. Box 3511 Station C, Ottawa, Ontario, Canada K1 Y 4H7
A. Majeed
Affiliation:
Bell Northern Research, Ltd. P.O. Box 3511 Station C, Ottawa, Ontario, Canada K1 Y 4H7
D. J. Mowbray
Affiliation:
Department of Physics, University of Sheffield, Sheffield, U.K S3 7RH
M. S. Skolnick
Affiliation:
Department of Physics, University of Sheffield, Sheffield, U.K S3 7RH
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Abstract

In this study, we report the optical properties of a variety of compositionally equivalent disordered superlattices in the AlAs/GaAs system. Markedly different signatures are seen in the steady-state optical signatures of a random pseudobinary A10.5Ga0.5As alloy and (AlAs)n(GaAs)4-n superlattices (SLs) where n = 2 (ordered) or n is randomly chosen (disordered). Relative to the properties of the pseudobinary alloy or ordered SL, intense, redshifted, photoluminescence (PL) peaks and broad non-excitonic absorption are observed from disordered (AlAs)n(GaAs)4-n SLs where n is randomly chosen from the sets [0, 1, 2, 3, 4] or [1, 2, 3]. Our observations suggest that a large density of states at energies lower than the compositionally equivalent pseudobinary band gap exist, and including wider wells and barriers may lead strongly localized regions and the onset of quantum effects. Room temperature electroluminescence is also observed from disordered SL pn samples, and the energy, intensity, and efficiency are shown to vary with deposition sequence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 499
Copyright
Copyright © Materials Research Society 1994

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