Hostname: page-component-cd9895bd7-jn8rn Total loading time: 0 Render date: 2024-12-27T02:22:29.496Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical Phenomena at the Absorption Edge of Crystalline and Amorphous Silicon

Published online by Cambridge University Press:  25 February 2011

George D. Cody
George D. Cody*
Affiliation:
Exxon Corporate Research Laboratory, Annandale, New Jersey, 08840, USA
Get access

Abstract

Optical phenomena associated with the absorption edge of crystalline silicon (c-Si) and amorphous silicon hydride (a-Si:H) are presented and compared. The optical properties discussed include the energy dependence, dipole matrix element and density of states associated with the absorption edge; the temperature dependence of the relevant optical energy gaps, and finally the magnitude and temperature dependence of the slope of the Urbach edge for each material. The comparison suggests that the optical properties of the two materials are closely related and that the absorption edge of a-Si:H may be derived from the effect of site disorder on the zone center direct gap of c-Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 113
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Adapted from Cody, G. D., in Physics of Disordered Materials, ed. Adler, D., Fritzsche, H. and Ovshinsky, S. (Plenum, New York, 1985) p. 327.Google Scholar
2 Cody, G. D., “The Optical Absorption Edge of a-Si:H” in Hydrogenated Amorphous Silicon. Semiconductors and Semimetals, 21C, ed. Pankove, J., (Academic Press, New York, 1984) p. 11 Google Scholar
3 Cody, G. D. in Physics and Applications of Amorphous Semiconductors Edited by Demichelis, E. (World Scientific Singapore, 1990) p.28–61.Google Scholar
4 Hass, K. C. and Ehrenreich, H., Annals of Physics 164, 77 (1985)Google Scholar
5 Jackson, W. B., Kelso, S. M., Tsai, C. C, Allen, J. W., and Oh, S.-J., Phys. Rev. B 31, 5187 (1985).Google Scholar
6 Cody, G. D., Brooks, B. G., and Abeles, B., Solar Energy Mat. 4, 231 (1982).Google Scholar
7 Taken from Apnes, D. E., “Optical Functions (Complex Refractive Index and Absorption Coefficient”, Properties of Silicon. Inspec Data Review Series No. 4 (INSPEC, London and New York, 1988).Google Scholar
8 Cody, G. D. and Brooks, B.G., unpublished (1983); in tabular form in reference 7; see alsoGoogle Scholar
Tiedje, T., Yablonovitch, E., Cody, G.D. and Brooks, B. G., IEEE Trans, on Elect. Devices ED–31, 711 (1984).Google Scholar
9 MacFarlane, G. E., McLean, T. P., Quarrington, J. E. and Roberts, V., Phys. Rev. 1ll, 1245 (1958).Google Scholar
10 Bludeau, W., Onton, A., and Heinke, H., J., Appl. Phys. 45, 1846 (1974).Google Scholar
11 Frova, A., Handler, P., Germano, F. A. and Aspnes, D. E., Phys. Rev. 145, 575 (1966).Google Scholar
12 Grein, C. H. and John, S., Phys. Rev. B 35, 7457 (1987);Google Scholar
Phys. Rev. B 39, 7457 (1989) and to appear in Solid State CommunicationsGoogle Scholar
13 Bardeen, J. and Shockley, W., Phys. Rev. 80, 72 (1950)Google Scholar
14 Cody, G. D., Tiedje, T., Abeles, B., Brooks, B. and Goldstein, Y., Phys. Rev. Let 47, 1480 (1981).Google Scholar
15 Tiedje, T. and Cebulka, J. M., Phys. Rev.B 28, 7075 (1983).Google Scholar
16 Bludeau, W., Onton, A. , and Heinke, H. J. ,J. Appl. Phys. 45, 1846 (1974)Google Scholar
17 Tauc, J., Grigorovici, R. and Vancu, A., Phys. Status Solid 15, 627 (1967)Google Scholar