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Optical Investigation of Strained-Layer GaInAs/GaInAsP Heterostructures

Published online by Cambridge University Press:  22 February 2011

I. Queisser ,
V. HÄrle ,
A. DÖrnen  and
F. Scholz
I. Queisser
Affiliation:
4. Physikalisches Institut, Universität Stuttgart Pfaffenwaldring 57, D-70550 Stuttgart, Germany
V. HÄrle
Affiliation:
4. Physikalisches Institut, Universität Stuttgart Pfaffenwaldring 57, D-70550 Stuttgart, Germany
A. DÖrnen
Affiliation:
4. Physikalisches Institut, Universität Stuttgart Pfaffenwaldring 57, D-70550 Stuttgart, Germany
F. Scholz
Affiliation:
4. Physikalisches Institut, Universität Stuttgart Pfaffenwaldring 57, D-70550 Stuttgart, Germany
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Abstract

We performed low temperature photocurrent and photoluminescence excitation spectroscopy on tensile and compressively strained GaxIn1-xAs/GaInAsP quantum well layers to determine the band offset of the heterojunction (0.3 <XGa < 0.7). The ratio of the conduction band discontinuity to the heavy hole discontinuity has been obtained from well to barrier transitions and is found to be about 35/65 for gallium contents between 0.4 and 0.6. We obtained the effective heavy hole mass by comparison of PLE transition energies with calculations of the subband levels. We observe that the effective heavy hole mass increases with the gallium content from 0.3 m0 for XGa = 0.31 to about 0.45m0 for XGa = 0.55.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 507
Copyright
Copyright © Materials Research Society 1994

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References

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