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Optical Furnace Annealing

Published online by Cambridge University Press:  25 February 2011

Neil J. Barrett ,
D.C. Bartle ,
A.G. Todd  and
J.D. Grange
Neil J. Barrett
Affiliation:
GEC Research Laboratories, Hirst Research Centre, Wembley, Middlesex, UK
D.C. Bartle
Affiliation:
GEC Research Laboratories, Hirst Research Centre, Wembley, Middlesex, UK
A.G. Todd
Affiliation:
GEC Research Laboratories, Hirst Research Centre, Wembley, Middlesex, UK
J.D. Grange
Affiliation:
GEC Research Laboratories, Hirst Research Centre, Wembley, Middlesex, UK
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Abstract

The rapid annealing of Be implanted GaAs has produced electrical activations of 70% for doses of 5 × 1014 cm−2 and hole profiles similar to the as implanted distribution. Si implanted GaAs has also been investigated using doses of 1 and 2 × 1014 cm−2 with sheet resistivities of 40 Ω/square after rapid thermal annealing. GaAs has been annealed with W-Si on the surface for the application of self aligned gate FET technology. Temperature cycles upto 850°C are required to activate the implanted dopant. Such cycles do not cause inter diffusion between the W-Si and GaAs or deterioration of the metallisation surface morphology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 451
Copyright
Copyright © Materials Research Society 1985

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References

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