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Optical Furnace Annealing

Published online by Cambridge University Press:  25 February 2011

Neil J. Barrett ,
D.C. Bartle ,
A.G. Todd  and
J.D. Grange
Neil J. Barrett
Affiliation:
GEC Research Laboratories, Hirst Research Centre, Wembley, Middlesex, UK
D.C. Bartle
Affiliation:
GEC Research Laboratories, Hirst Research Centre, Wembley, Middlesex, UK
A.G. Todd
Affiliation:
GEC Research Laboratories, Hirst Research Centre, Wembley, Middlesex, UK
J.D. Grange
Affiliation:
GEC Research Laboratories, Hirst Research Centre, Wembley, Middlesex, UK
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Abstract

The rapid annealing of Be implanted GaAs has produced electrical activations of 70% for doses of 5 × 1014 cm−2 and hole profiles similar to the as implanted distribution. Si implanted GaAs has also been investigated using doses of 1 and 2 × 1014 cm−2 with sheet resistivities of 40 Ω/square after rapid thermal annealing. GaAs has been annealed with W-Si on the surface for the application of self aligned gate FET technology. Temperature cycles upto 850°C are required to activate the implanted dopant. Such cycles do not cause inter diffusion between the W-Si and GaAs or deterioration of the metallisation surface morphology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 451
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

1 Chatterjee, P.K., Vaidyanathan, K.V., McLevige, M.V. and Streetman, B.G., Appl. Phys. Lett. 27, (1975) p 567 Google Scholar
2 McLevige, W.V., Helix, M.J., Vaidyanathan, K.V. and Streetman, B.G., J. Appl. Phys. 48, (1977) p 3342 Google Scholar
3 McLevige, M.V., Vaidyanathan, K.V., Streetman, B.G., Comas, J. and Plew, L., Sol. State. Comm. 25, (1978) p 1003 Google Scholar
4 Banerjee, S.K., Dejale, R.Y., Soda, K.J. and Streetman, B.G., IEEE Elect. Dev. ED–30. (1983) p 1755 Google Scholar
5 Tabatabaie-Alavi, K., Choudbury, A.N.M., Kanbe, H., Fonstad, C.G. and Gelpey, J.C., Appl. Phys. Lett. 43 (1983) p 647 Google Scholar
6 Asbeck, P.M., Miller, D.L., Babcock, E.J. and Kirkpatrick, C.G., IEEE Elect. Dev. Lett. EDL–4, (1983) p 81 Google Scholar
7 Barrett, N.J., Bartle, D.C., Nicholls, R. and Grange, J.D., Proc. 11th International Symposium on GaAs and related compounds, Biarritz (1984)Google Scholar
8 Kamalov, M.N., Kolesnik, L.I., Milvidskii, M.G., Rakov, V.V. and Shershakova, I.N., Sov. Phys. Semicond. 12, (1978) p 340 Google Scholar
9 Tandon, J.L., Nicolet, M.A. and Eisen, F.H., Appl. Phys. Lett. 34, (1979) 165 Google Scholar
10 Masuyama, A., Nicolet, M.A., Golecki, I., Tandon, J.L., Sadana, D.K. and Washburn, J., J. Appl. Phys. Lett. 36, (1980) p 749 Google Scholar
11 Bhattacharya, R.S., Rai, A.K., Yeo, Y.K., Pronko, P.P., Ling, S.C., Wilson, S.R. and Park, Y.S., J. Appl. Phys. 54, (1983) p 2329 Google Scholar
12 Greiner, M.E. and Gibbons, J.F., Appl. Phys. Lett. 44, (1984) p 750 Google Scholar
13 Hurle, D.T.J. J. Cry. Growth 50, (1980) p 638 Google Scholar
14 Hwang, C.J., J. Appl. Phys. 39, (1968) p 5347 Google Scholar
15 Kanber, H., Feng, M. and Whëlan, J.M., Appl. Phys. Lett. 40, (1982) p 960 Google Scholar
16 Onuma, T., Hirao, T. and Sugawa, T., J Electrochem. Soc: Solid State Sc. and Tech. 129, (1982) p 837 Google Scholar
17 Arai, M., Nishiyama, K. and Watanabe, N., Jpn. J. Appl. Phys. 20, (1981) p L124 Google Scholar
18 Davies, D.E., McNally, P.J., Lorenzo, J.P. and Julian, M., Elect. Dev. Lett. EDL–3, (1982) p 102 Google Scholar
19 Kuzuhana, M., Kohzu, H. and Takayama, Y., Appl. Phys. Lett. 41, (1982) p 755 Google Scholar
20 Ito, K., Yoshida, M. Otsubo, M. and Murotani, T., Jpn. J. Appl. Phy. 22, (1983) p L299Google Scholar
21 Badawi, M.H. and Mun, J., Elec. Lett 20, (1984) p 125 Google Scholar
22 Kohzu, H., Kuzuharam, M and Takayama, Y., J. Appl. Phys. 54, (1983) p 4998 Google Scholar
23 Ohnishi, T., Yamaguchi, Y., Inada, T., Yokayama, N. and Nishi, H., IEEE Elect. Dev. Lett. EDL–5, (1984) p 403 Google Scholar
24 Sugata, S., Tsukada, N. Nakajima, M., Kuramoto, K. and Mita, Y., Jpn. J. Appl. Phys. 22, (1983) p L470Google Scholar
25 Grange, J.D. and Wickenden, D.K., Sol. State. Elect. 25, (1983) p 313 Google Scholar
26 Bartle, D., Andrews, D.C., Grange, J.D., Harris, P., Trigg, A.D. and D., Wickenden, Vacuum 34 (1984) p 315 Google Scholar
27 Stewart, C., Medland, J.D. and Wickenden, D.K., Semi-insulating III-V Materials Conference, Oregon (1984)Google Scholar