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Published online by Cambridge University Press: 21 February 2011
Optical emission spectroscopy and laser Doppler velocimetry were done for an Rf inductively coupled plasma at atmospheric pressure in order to elucidate the super-rapid coofling of the thermal plasma during the growth of diamond thin film. Attention was given to the vicinity of the water-cooled substrate located 20 mm beneath the RF coil. It was found that at 1.5 mm above the substrate, the temperature of plasma was still high. At the temperature, high concentration of hydrogen atoms exist, which may take a important role in diamond growth.