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Optical Effects Induced by the Multilayer Nature of SOI Films During Transient Thermal Processing with a Radiant Line Heat Source.
Published online by Cambridge University Press: 26 February 2011
Abstract
Radiation heat transfer has been found to have the greatest Impact on the quality of the thin recrystalllzed silicon film during zone-melting recrystallizatlon (ZMR) processing. This study focused on the radiation effects during ZMR with an Infrared radiant line heat source such as a graphite strip heater. The multilayer nature of the capped sllicon-on-tnsulator (SOI) structure Induces complex optical effects which affect the temperature distribution during processing. A two dimensional numerical model of the ZMR process has been developed using a finite difference scheme. The effect of the radiant line heat source’s emission into the wafer has been modeled with a matrix method using Fresnel coefficients. A numerical parametric study was conducted to observe the effects of varying the thickness of the different layers In a capped SOI wafer on the maximum temperature and melt width attained. Results indicate that the variation of either the capping or insulating silicon oxide layer causes significant fluctuations of the reflectivity and temperature profile of the film. Increasing the thickness of the Si layer results in a nearly linear increase in temperature and melt width after complete melting. Layering schemes that are sensitive to small variations In thickness that may result in large changes in reflectivity were Identified.
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- Copyright © Materials Research Society 1991
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