Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-05T06:51:13.706Z Has data issue: false hasContentIssue false

Optical Effects Induced by the Multilayer Nature of SOI Films During Transient Thermal Processing with a Radiant Line Heat Source.

Published online by Cambridge University Press:  26 February 2011

Peter Y. Wong
Affiliation:
Thermal Analysis of Materials Processing Laboratory, Mechanical Engineering Department, Tufts University, Medford, MA 02115
Ioannis N. Miaoulis*
Affiliation:
Thermal Analysis of Materials Processing Laboratory, Mechanical Engineering Department, Tufts University, Medford, MA 02115
P. Zavracky
Affiliation:
Kopln Corp, Taunton MA 02780
*
author 10 whom correspondance should be addressed
Get access

Abstract

Radiation heat transfer has been found to have the greatest Impact on the quality of the thin recrystalllzed silicon film during zone-melting recrystallizatlon (ZMR) processing. This study focused on the radiation effects during ZMR with an Infrared radiant line heat source such as a graphite strip heater. The multilayer nature of the capped sllicon-on-tnsulator (SOI) structure Induces complex optical effects which affect the temperature distribution during processing. A two dimensional numerical model of the ZMR process has been developed using a finite difference scheme. The effect of the radiant line heat source’s emission into the wafer has been modeled with a matrix method using Fresnel coefficients. A numerical parametric study was conducted to observe the effects of varying the thickness of the different layers In a capped SOI wafer on the maximum temperature and melt width attained. Results indicate that the variation of either the capping or insulating silicon oxide layer causes significant fluctuations of the reflectivity and temperature profile of the film. Increasing the thickness of the Si layer results in a nearly linear increase in temperature and melt width after complete melting. Layering schemes that are sensitive to small variations In thickness that may result in large changes in reflectivity were Identified.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Grigoropoulos, C. P., Buckholz, R. H.. Domoto, G. A., “The Role of Reflectivity Change in Optically Induced Recrystallizatlon of Thin Silicon Films.” J. Appl. Phvs. 59. 2 (1986)Google Scholar
2. Pfelffer, L.. Gelman, A. E., Jackson, K. A., West, K. W., Batstone, J. L.. “Subboundary-free Zone-melt Recrystallizatlon of Thin-Film Silicon,” Appl. Phvs. Lett. 51, 16 (1987)Google Scholar
3. Chen, C. K.. Gels, M. W.. Tsaur, B-Y., Chapman, R. L.. Fan, J. C. C., “Topographic Imperfections In Zone Melting Recrystallized SI Films on SiO2.” J. Electrochem. Soc. 131. 7 (1984)Google Scholar
4. Miaoulis, I. N., “Thermal Analysis of Thin Film Zone-Melting-Recrystalllzation.” Proc. of the International Conference on Recrystallizatlon of Metallic Materials, Wollongong, Australia, January 1990 Google Scholar
5. Miaoulis, I. N.. Lipman, J. D.. Wong, P. Y.. Im, J. S.. “Thermal Modeling of Zone-Meltlng-Recrystalllzatlon Processing of Sllicon-On-Insulator Film Structures.” submitted to Applied PhvsGoogle Scholar
6. Miaoulis, I. N.. Lipman, J. D., Wong, P. Y., Im, J. S.. “Thermal Radiation Intensity Profile Effects In Graphite Strip Zone-Melting-Recrystalllzation of Silicon-On-Insulator Film Structures,” submitted to J. Applied PhvsGoogle Scholar
7. Hottel, H. C.. Sarofim, A. F.. Radiative Transfer. (McGraw-Hill. Inc., New York, 1967). p. 37 Google Scholar
8. Heavens, O. S., Optical Properties Of Thin Solid Films. (Buttersworth, Washington, D. C. 1955). pp. 4695 Google Scholar
9. Lipman, J.D.. Miaoulis, I. N.. Im, J. S.. “Parametric Study of the Zone-Melting-Recrystallization Process of SOI Structures.” Mat. Res. Soc. Symp. Proc. 157, (1990)Google Scholar