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Optical Detection of Magnetic Resonance (ODMR) Studies of the Electronic Structure of Complex Defects in GaP

Published online by Cambridge University Press:  26 February 2011

W. M. Chen ,
M. Godlewski ,
B. Monemar  and
H. P. Gislason
W. M. Chen
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
M. Godlewski
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
B. Monemar
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
H. P. Gislason
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
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Abstract

Optical detection of magnetic resonance (ODMR) is applied to studies of neutral (“isoelectronic”) complex defects in GaP, via monitoring recombination of the excited bound exciton (BE) state associated with these defects. With examples of isoelectronic complex defects in GaP associated with C, Cu, Li and the PGa -antisite, it is shown how the ODMR data reveal the magnetic properties of both electrons and holes bound at such defects. The procedures to conclude on defect symmetry, structure and identity are also elucidated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 443
Copyright
Copyright © Materials Research Society 1988

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Footnotes

*

Permanent address: Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Al. Lotnikow 32/46, Poland

**

Permanent address: Science Institute, University of Iceland, Dunhaga 3, 107 Reykjavik, Iceland

References

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