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Optical Detection of Band Gap Variations Due to Ordering in Ga0.47In0.53As on InP

Published online by Cambridge University Press:  25 February 2011

D. J. Arent ,
K. A. Bertness ,
Sarah R. Kurtz ,
M. Bode  and
J. M. Olson
D. J. Arent
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401–3393
K. A. Bertness
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401–3393
Sarah R. Kurtz
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401–3393
M. Bode
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401–3393
J. M. Olson
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401–3393
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Abstract

A reduction in the optical energy gap of more than 65 meV has been observed in In0.53Ga0.47 As grown on (100) InP by atmospheric pressure metalorganic vapor phase epitaxy. The band gap energies were deduced from room temperature photocurrent spectroscopic measurements, accounting for differences in composition and strain. Spontaneous CuPt type ordering of In and Ga atoms on the (111) subplanes of the InGaAs2 was confirmed by transmission electron microscopy. Superlattice signatures in the transmission micrographs were observed only for samples with associated reduced band gap energies, and were confirmed by visible double periodicity in high resolution images. In0.53Ga0.47 As was grown under a variety of conditions, some which promoted ordering. In general, lower growth temperatures and moderate (∼4 μ/hr) growth rates promoted a greater degree of ordering and reduction of the band gap energy. The influence of growth conditions on the ordered structure is considered within the context of current theories.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 67
Copyright
Copyright © Materials Research Society 1993

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References

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