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Optical Characterization of the Visible Photoluminescence from Porous Silicon

Published online by Cambridge University Press:  15 February 2011

H. D. Fuchs ,
M. S. Brandt ,
M. Stutzmann  and
J. Weber
H. D. Fuchs
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-7000 Stuttgart 80
M. S. Brandt
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-7000 Stuttgart 80
M. Stutzmann
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-7000 Stuttgart 80
J. Weber
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-7000 Stuttgart 80
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Abstract

The visible photoluminescence of electrochemically etched silicon wafers is studied by cw- and pulsed-laser excitation. Raman data and infrared transmission measurements on the same samples prove the presence of oxygen and hydrogen in different bonding configurations in the luminescent layers. Identical optical properties are found for chemically synthesized siloxene (Si6O3H6) and its derivates. We present evidence that the origin of the strong room temperature luminescence in “porous” silicon can be traced to siloxene derivates present in the samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 256: Symposia AA – Light Emission from Silicon , 1991 , 159
Copyright
Copyright © Materials Research Society 1992

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References

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