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Optical Characterization of InGaAs/InP Quantum Wires and Dots

Published online by Cambridge University Press:  22 February 2011

S.Q. Gu ,
E. Reuter ,
Q. Xu ,
H. Chang ,
R. Panepucci ,
I. Adesida  and
S.G. Bishop
S.Q. Gu
Affiliation:
Center for Compound Semiconductor Microelectronics, Materials Research Labooratory, and Beckman InstituteUniversity of Illinois at Urbana-Champaign, Urbana, Illinois 61801 C. Caneau and R. Bhat Bell Communications Research, Red Bank, New Jersey, 07701
E. Reuter
Affiliation:
Center for Compound Semiconductor Microelectronics, Materials Research Labooratory, and Beckman InstituteUniversity of Illinois at Urbana-Champaign, Urbana, Illinois 61801 C. Caneau and R. Bhat Bell Communications Research, Red Bank, New Jersey, 07701
Q. Xu
Affiliation:
Center for Compound Semiconductor Microelectronics, Materials Research Labooratory, and Beckman InstituteUniversity of Illinois at Urbana-Champaign, Urbana, Illinois 61801 C. Caneau and R. Bhat Bell Communications Research, Red Bank, New Jersey, 07701
H. Chang
Affiliation:
Center for Compound Semiconductor Microelectronics, Materials Research Labooratory, and Beckman InstituteUniversity of Illinois at Urbana-Champaign, Urbana, Illinois 61801 C. Caneau and R. Bhat Bell Communications Research, Red Bank, New Jersey, 07701
R. Panepucci
Affiliation:
Center for Compound Semiconductor Microelectronics, Materials Research Labooratory, and Beckman InstituteUniversity of Illinois at Urbana-Champaign, Urbana, Illinois 61801 C. Caneau and R. Bhat Bell Communications Research, Red Bank, New Jersey, 07701
I. Adesida
Affiliation:
Center for Compound Semiconductor Microelectronics, Materials Research Labooratory, and Beckman InstituteUniversity of Illinois at Urbana-Champaign, Urbana, Illinois 61801 C. Caneau and R. Bhat Bell Communications Research, Red Bank, New Jersey, 07701
S.G. Bishop
Affiliation:
Center for Compound Semiconductor Microelectronics, Materials Research Labooratory, and Beckman InstituteUniversity of Illinois at Urbana-Champaign, Urbana, Illinois 61801 C. Caneau and R. Bhat Bell Communications Research, Red Bank, New Jersey, 07701
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Abstract

High resolution electron beam lithography and reactive ion etching in methane-hydrogen (CH4/H2) plasmas have been used to fabricate InGaAs/InP open quantum well wires (QWW) with widths ranging from 200 to 40 nm and quantum dots (QD) with diameters ranging from 600 to 100 nm. Low temperature photoluminescence (PL) spectra were investigated in these nanostructures as a function of excitation intensity, wire width, and dot diameter. The peak emission of the dry-etched 40 nm wires is shifted to higher energies by about 2 meV as compared to 100 nm wires. This “open wire” result is consistent with results reported for buried InGaAs/InP wires of the same width. The blue-shift of the PL peak reaches 10 meV in QDs as their diameters decrease to 100 nm. The magnitude of the observed blue shift in the QDs is larger than the blue-shift predicted on the basis of quantum confinement for the same size dots.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 181
Copyright
Copyright © Materials Research Society 1994

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References

1. Arakawa, Y. and Sakaki, H.: Appl. Phys. Lett. 40, 939 (1982).CrossRefGoogle Scholar
2. Forchel, A., Menschig, A., Maile, B.E., Leier, H. and Germann, R., J.Vac. Sci. Technol. B, 9, 444 (1991).Google Scholar
3. Notomi, M., Naganuma, M., Nishida, T., Tamamura, T., Iwamura, H., Nojima, S., and Okamoto, M., Appl. Phys. Lett. 58, 720 (1991).Google Scholar
4. Greus, Ch., Butov, L., Daiminger, F., Forchel, A., Knipp, P.A. and Reinecke, T.L., Phys. Rev. B 47, (1993).CrossRefGoogle Scholar
5. Kash, K., Bhat, R., Mahoney, D.D., Lin, P.S.D., Scherer, A., Worlock, J.M., Gaad, B.P. Vender, Koza, M. and Grable, P., Appl. Phys. Lett. 55, 413 (1987).Google Scholar
6. Tsuchiya, M., Gaines, J.M., Yan, R.H., Simes, R.J., Holtz, P.O., Coldren, L.A., and Petroff, P.M., Phys. Rev. Lett. 62, 466 (1989).CrossRefGoogle Scholar
7. Weiner, J.S., Calleja, J.M., Pinczuk, A., Schmeller, A., Dennis, B.S., Goni, A.R., Pfeiffer, L.N., and West, K.W., Appl. Phys. Lett. 63, 237 (1993)Google Scholar
8. Izrael, A., Sermage, B., Marzin, J.Y., Ougazzaden, A., Azoulay, R., Etrillard, J., Thierry-Mieg, V., and Henry, L., Appl. Phys. Lett. 56, 830 (1990).Google Scholar
9. Gustafsson, A., Liu, X., Maximov, I., Samuelson, L., and Seifert, W., Appl. Phys. Lett. 62, 1709 (1993).Google Scholar
10. Gu, S.Q., Reuter, E., Xu, Q., Chang, H., Panepucci, R., Adesida, I., Bishop, S.G., Caneau, C. and Bhat, R., to be published.Google Scholar
11. Hirler, F., Kuchler, R., Strenz, R., Abstreiter, G., Bohm, G., Smoliner, J., Trankle, G. and Weimann, G., Surface Science 263, 536 (1992)Google Scholar
12. Kulakovskii, V.D., Lach, E., Forchel, A. and Grutzmacher, D., Phys. Rev. B 40, 8087 (1989).Google Scholar