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Optical Characterization of GaAsP Strained Layers Grown on (111)-Oriented GaP

Published online by Cambridge University Press:  28 February 2011

M.-E. Pistol ,
M. Gerling ,
A. Gustafsson ,
G. Paulsson ,
L. Samuelson  and
H. Titze
M.-E. Pistol
Affiliation:
Department of Solid State Physics, University of Lund, P. O. Box 118, S-221 00 Lund SWEDEN
M. Gerling
Affiliation:
Department of Solid State Physics, University of Lund, P. O. Box 118, S-221 00 Lund SWEDEN
A. Gustafsson
Affiliation:
Department of Solid State Physics, University of Lund, P. O. Box 118, S-221 00 Lund SWEDEN
G. Paulsson
Affiliation:
Department of Solid State Physics, University of Lund, P. O. Box 118, S-221 00 Lund SWEDEN
L. Samuelson
Affiliation:
Department of Solid State Physics, University of Lund, P. O. Box 118, S-221 00 Lund SWEDEN
H. Titze
Affiliation:
Department of Solid State Physics, University of Lund, P. O. Box 118, S-221 00 Lund SWEDEN
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Abstract

Strained layers of indirect GaAsP have been grown on the (111)B-oriented surface of GaP by Metal-Organic Vapour Phase Epitaxy (MOVPE). These layers have been characterized by low-temperature photoluminescence (PL), electroreflectance (ER), secondary-ion mass spectroscopy (SIMS), and wavelength resolved imaging cathodoluminescence (CL). We have been able to follow the transition energies of the lowest X conduction band edge, as well as the higher Γ band edge of the strained layers, as a function of composition up to an As-concentration of 38 %. The experimental values of the transition energies are compared with predictions made from calculations based on deformation potential theory. CL allows us to directly observe the onset of dislocation formation, i. e. the critical thickness. The appearance and properties of the dislocation network revealed by CL are very different from those of the corresponding network when the strained layers are grown on (001)-oriented surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 673
Copyright
Copyright © Materials Research Society 1990

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References

1Smith, D. L., Solid State Commun. 57, 919 (1986).Google Scholar
2Launch, B. K., Elcess, K., Fonstad, C. G., Beery, J. G., Mailhiot, C., and Smith, D. L., Phys. Rev. Lett. 62, 649 (1989).Google Scholar
3Beery, J. G., Laurich, B. K., Maggiore, C. J., Smith, D. L., Elcess, K., Fonstad, C. G., and Mailhiot, C., Appl. Phys. Lett. 54, 233 (1989).Google Scholar
4Mailhiot, C. and Smith, D. L., Phys. Rev. B35, 1242 (1987).Google Scholar
5Mendez, E. E., Chang, L. L., Landgren, G., Ludeke, R., Esaki, L., and Pollak, F. H., Phys. Rev. Lett. 46, 1230 (1981).Google Scholar
6Lai, Shui and Klein, M. V., Phys. Rev. Lett. 44, 1087 (1980).Google Scholar
7Samuelson, L. and Pistol, M.-E., Solid State Commun. 52, 789 (1984).Google Scholar
8Pistol, M.-E., Leys, M. R., and Samuelson, L., Phys. Rev. B37, 4664 (1988).Google Scholar
9Hensel, J. C. and Feher, G., Phys. Rev. 129, 1041 (1963).Google Scholar
10Mathieu, H., Merle, P., Ameziane, E. L., Archilla, B., Camassel, J., Poiblaud, G., Phys. Rev. B19, 2209 (1979).Google Scholar
11Wolford, D. J., Bradley, J. A., Fry, K., Thompson, J., and King, H. E., in Proceedings of the 13th International Symposium on GaAs and Related Compounds, edited by Stillman, G. E. (The Institute of Physics, London, 1982).Google Scholar
12Matthews, J.W and Blakeslee, A. E., Journ. of Cryst. Growth 27, 118 (1974).Google Scholar
13Leys, M. R., Titze, H., Samuelson, L., and Petruzello, J., Journ. of Cryst. Growth 93, 504 (1988).Google Scholar
14Gustafsson, A., Gerling, M., Jönsson, J., Leys, M. R., Pistol, M.-E., Samuelson, L., and Titze, H., in Proceedings of “Microscopy of Semiconducting Materials”, Oxford 1989, to be published by the Institute of Physics and Chemistry of Solids (1989).Google Scholar
15Petroff, P. M., Logan, R. A., and Savage, A., Journ. of Microsc. 118, 255 (1980).Google Scholar
16Gustafsson, A. (unpublished).Google Scholar
17Olsen, G. H., Abrahams, M. S., and Zamerowski, T. J., Journ. of Electrochem. Soc. 121, 1650 (1974).Google Scholar