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Optical Characterization of AlInP/GaAs Heterostructures

Published online by Cambridge University Press:  22 February 2011

F.G. Johnson ,
G.E. Kohnke  and
G.W. Wicks
F.G. Johnson
Affiliation:
The Institute of Optics, University of Rochester, Rochester, NY 14627
G.E. Kohnke
Affiliation:
The Institute of Optics, University of Rochester, Rochester, NY 14627
G.W. Wicks
Affiliation:
The Institute of Optics, University of Rochester, Rochester, NY 14627
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Abstract

A 45 period GaAs/A10.54In0.46P superlattice was grown by molecular beam epitaxy using valved solid-sources to supply both the arsenic (As4) and the phosphorus (P2) group V fluxes. The room temperature optical transmission spectrum shows evidence of ground state excitons. Higher energy confined states are exhibited in photovoltage and photoreflectance spectra. Doublets corresponding to the m≈1 through m≈7 folded longitudinal-acoustic phonon modes are observed in the Raman spectrum. Analysis of these phonon doublets enables the structure of the superlattice to be determined. The interface roughness was found to be approximately 2 monolayers, and the layer thicknesses were determined to be 82 Å GaAs and 48 Å A10.54In0.46P.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 279
Copyright
Copyright © Materials Research Society 1994

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