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Optical Band Gap of Diamond-Like Carbon Films as a Function of RF Substrate Bias

Published online by Cambridge University Press:  26 February 2011

P. W. Pastel  and
W. J. Varhue
P. W. Pastel
Affiliation:
Dept. of Computer Science and Electrical Engineering, University of Vermont, Burlington, VT. 05405
W. J. Varhue
Affiliation:
Dept. of Computer Science and Electrical Engineering, University of Vermont, Burlington, VT. 05405
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Abstract

Diamond-like carbon films have been deposited with a low temperature 2.45 GHz electron cyclotron resonance plasma enhanced chemical vapor deposition system. The bombarding ion energy was independently controlled with a RF bias to the substrate. The production rate of reactant species and the impinging ion energy are decoupled with this system. The optical band gap decreased from 2.7 to 1.2 eV as substrate bias was increased from 0 to -140 V.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 389
Copyright
Copyright © Materials Research Society 1990

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References

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