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Optical Anisotropy in a GaAs/AlAs Quantum Wire Array Grown on Vicinal Substrate

Published online by Cambridge University Press:  26 February 2011

H. Kanbe ,
A. Chavez-Pirson ,
M. Kumagai ,
H. Saito  and
T. Fukui
H. Kanbe
Affiliation:
NTT Basic Research Laboratories, Musashino-shi, Tokyo 180, Japan
A. Chavez-Pirson
Affiliation:
NTT Basic Research Laboratories, Musashino-shi, Tokyo 180, Japan
M. Kumagai
Affiliation:
NTT Basic Research Laboratories, Musashino-shi, Tokyo 180, Japan
H. Saito
Affiliation:
NTT Basic Research Laboratories, Musashino-shi, Tokyo 180, Japan
T. Fukui
Affiliation:
NTT Basic Research Laboratories, Musashino-shi, Tokyo 180, Japan
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Abstract

The optical properties of a quantum wire array which was successfully realized in a 4-nm-thick (GaAs)1/2 (AlAs)1/2 fractional-layer superlattice (FLS) are described. The FLS sample was grown by metalorganic chemical vapor deposition on a (001) vicinal GaAs substrate tilted 2 ° towards [110]. The nominal cross sectional size of the GaAs wires is 4×4 nm. Optical anisotropy in absorption, refractive index and photoluminescence was clearly observed by polarization spectroscopy at room temperature as well as lower temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 213
Copyright
Copyright © Materials Research Society 1992

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References

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