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Optical and Structural Properties of MeV Erbium Implanted LiNbO3

Published online by Cambridge University Press:  22 February 2011

M. Fleuster ,
CH. Buchal ,
E. Snoeks  and
A. Polman
M. Fleuster
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich (KFA), D-52425 Jüich, Germany
CH. Buchal
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich (KFA), D-52425 Jüich, Germany
E. Snoeks
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
A. Polman
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
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Abstract

LiNbO3 single crystals were implanted with Er ions at 3.5 MeV with fluences up to 3*1016 Er/cm2 and subsequently annealed at 1060°C. The warm-up rate of the sample determines whether the implanted, amorphized surface layer recrystallizes via columnar or via layer-by-layer solid phase epitaxial (SPE) growth. The maximum concentration of optically active Er ions is determined to be 0.18 at.%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 463
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1 Suche, H., Baumann, I., Hiller, D., and Sohler, W., Electron. Lett. 29, 1111 (1993).Google Scholar
2 Dinand, M. and Sohler, W., to be published in IEEE, J. QE. Google Scholar
3 Brinkmann, R., Sohler, W., Suche, H., Electr. Lett. 27, 415 (1991).Google Scholar
4 Becker, P., Brinkmann, R., Dinand, M., Sohler, W., and Suche, H., Appl. Phys. Lett. 61, 1257 (1992).Google Scholar
5 Fleuster, M., Buchal, Ch., Holzbrecher, H., Breuer, U., Dinand, M., Suche, H., Brinkmann, R., and Sohler, W., Mat. Res. Soc. Symp. Proc. 279, 279 (1993).Google Scholar
6 Fleuster, M., Buchal, Ch., Snoeks, E. and Polman, A., to be published in J. Appl. Phys. Google Scholar
7 Fleuster, M., Buchal, Ch., Snoeks, E. and Polman, A., submitted to Appl. Phys. Lett. Google Scholar