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Optical and Structural Properties of Er3+-Doped GaN Grown by MBE

Published online by Cambridge University Press:  15 February 2011

R. H. Birkhahn ,
R. Hudgins ,
D. S. Lee ,
B.K. Lee ,
A. J. Steckl ,
A. Saleh ,
R. G. Wilson  and
J. M. Zavada
A. J. Steckl
Affiliation:
University of Cincinnati, Nanoelectronics Lab, Cincinnati, OH 45221-0030
A. Saleh
Affiliation:
Charles Evans & Associates, Sunnyvale, CA 94086
R. G. Wilson
Affiliation:
Charles Evans & Associates, Sunnyvale, CA 94086
J. M. Zavada
Affiliation:
USARO, Research Triangle Park, NC 27709
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Abstract

We report the morphological and compositional characteristics of Er-doped GaN grown by MBE on Si(111) substrates and their effect on optical properties. The GaN was grown by molecular beam epitaxy using solid sources (for Ga and Er) and a plasma gas source for N2. The films emit by photoexcitation in the visible and near infrared wavelengths from the Er atomic levels. The morphology of the GaN:Er films was examined by AFM. Composition was determined by SIMS depth profiling that revealed a large Er concentration at 4.5 × 1021 atoms/cm3 accompanied by a high oxygen impurity concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G3.80
Copyright
Copyright © Materials Research Society 1999

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