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Optical and Structural Investigations on Mn-Ion States in MOCVD-grown Ga1−xMnxN

Published online by Cambridge University Press:  01 February 2011

Strassburg Martin ,
Senawiratne Jayantha ,
Hums Christoph ,
Dietz Nikolaus ,
Kane Matthew H. ,
Asghar Ali ,
Summers Christopher J. ,
Haboeck Ute ,
Hoffmann Axel  and
Azamat Dmitry
...Show all authors
Strassburg Martin
Affiliation:
Georgia State University, Department of Physics and Astronomy, Atlanta, GA 30303, U.S.A. Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, GA, 30332–0250, U.S.A.
Senawiratne Jayantha
Affiliation:
Georgia State University, Department of Physics and Astronomy, Atlanta, GA 30303, U.S.A.
Hums Christoph
Affiliation:
Georgia State University, Department of Physics and Astronomy, Atlanta, GA 30303, U.S.A.
Dietz Nikolaus
Affiliation:
Georgia State University, Department of Physics and Astronomy, Atlanta, GA 30303, U.S.A.
Kane Matthew H.
Affiliation:
Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, GA, 30332–0250, U.S.A. Georgia Institute of Technology, Materials Science and Engineering, Atlanta, GA 30332–245, U.S.A.
Asghar Ali
Affiliation:
Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, GA, 30332–0250, U.S.A.
Summers Christopher J.
Affiliation:
Georgia Institute of Technology, Materials Science and Engineering, Atlanta, GA 30332–245, U.S.A.
Haboeck Ute
Affiliation:
Institut für Festkörperphysik, Technische Universität Berlin, D - 10623 Berlin, Germany.
Hoffmann Axel
Affiliation:
Institut für Festkörperphysik, Technische Universität Berlin, D - 10623 Berlin, Germany.
Azamat Dmitry
Affiliation:
Institut für Festkörperphysik, Technische Universität Berlin, D - 10623 Berlin, Germany.
Gehlhoff Wolfgang
Affiliation:
Institut für Festkörperphysik, Technische Universität Berlin, D - 10623 Berlin, Germany.
Ferguson Ian T.
Affiliation:
Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, GA, 30332–0250, U.S.A.
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Abstract

The incorporation of Mn into GaMnN epilayers by MOCVD growth was investigated. Samples with high Mn concentrations lead to room temperature ferromagnetism. In addition an absorption band around 1.5 eV was observed. Intensity and linewidth of this band scaled with the Mn concentration and with the room temperature (RT) saturation magnetization. This band is assigned to the internal Mn3+ transition between the 5E and the partially filled 5T2 levels of the 5D state. The broadening of the absorption band is introduced by the high Mn concentration. Recharging of the Mn3+ to Mn2+ was found to effectively suppress these transitions resulting also in a significant reduction of the RT magnetization. The pronounced sensitivity of the relative position of the Fermi level and 1.5 eV absorption band can be used to predict the magnetization behavior of the Ga1−xMnxN epilayers. The absence of doping-induced strain was observed by Raman spectroscopy. The structural quality, the presence of Mn2+ ions were confirmed by EPR spectroscopy, meanwhile no Mn-Mn interactions were observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E9.5
Copyright
Copyright © Materials Research Society 2005

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References

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