Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-25T17:27:17.313Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical and Structural Characterization of InAs/GaAs Quantum Wells

Published online by Cambridge University Press:  25 February 2011

A. Ksendzov ,
T. George ,
F.J. Grunthaner ,
J.K. Liu ,
D.H. Rich ,
R.W. Terhune ,
B.A. Wilson ,
F.H. Pollak  and
Y.-S. Huang
A. Ksendzov
Affiliation:
Center for Space Microelectronics Technology, Jet Proulsion Laboratory, California Institute of Technology, Pasadena, CA 91109
T. George
Affiliation:
Center for Space Microelectronics Technology, Jet Proulsion Laboratory, California Institute of Technology, Pasadena, CA 91109
F.J. Grunthaner
Affiliation:
Center for Space Microelectronics Technology, Jet Proulsion Laboratory, California Institute of Technology, Pasadena, CA 91109
J.K. Liu
Affiliation:
Center for Space Microelectronics Technology, Jet Proulsion Laboratory, California Institute of Technology, Pasadena, CA 91109
D.H. Rich
Affiliation:
Center for Space Microelectronics Technology, Jet Proulsion Laboratory, California Institute of Technology, Pasadena, CA 91109
R.W. Terhune
Affiliation:
Center for Space Microelectronics Technology, Jet Proulsion Laboratory, California Institute of Technology, Pasadena, CA 91109
B.A. Wilson
Affiliation:
Center for Space Microelectronics Technology, Jet Proulsion Laboratory, California Institute of Technology, Pasadena, CA 91109
F.H. Pollak
Affiliation:
Brooklyn College of CUNY, Brooklyn, NY 11210 Also at the Graduate School and University Center of the City University of New York
Y.-S. Huang
Affiliation:
Brooklyn College of CUNY, Brooklyn, NY 11210
Get access

Abstract

Three InAs/GaAs single quantum wells of 2, 3, and 4 monolayer thickness were characterized using optical and structural techniques. The results of high-resolution transmission electron (HRTEM) microscopy and optical studies which combine absorption, photoluminescence (PL), photoreflectance and cathodoluminescence are presented.

Using the polarization modulated absorptance technique we observed two absorption features in our samples at 77 K. On the basis of their polarization properties and comparison with an envelope function calculation, these structures are assigned to transitions between the confined heavy-hole and confined and unconfined electron levels. Photoreflectance spectra of the 3- monolayer sample in 77-300 K range show only the fundamental quantum well transition. The temperature dependence of this transition is approximately linear with a slope of 2.2·10−4 eV/K which is significantly lower than in both constituent materials.

Comparison to the absorption data reveals that the PL spectra are affected by the carrier diffusion and therefore do not provide direct measure of the exciton density of states. Therefore, photoluminescence results alone do not provide unequivocal information about the fundamental transition energy or the interface quality in quantum wells.

The HRTEM images indicate that while the interfaces of the 2-monolayer sample are smooth and the well thickness is uniform, the 4-monolayer sample has uneven interfaces and contains domains of 2, 3, and 4 monolayers. In agreement with these observations, absorption features broaden with the increased well width. Scanning cathodoluminescence images of the 2- monolayer sample present no evidence of dislocations, which is consistent with the HRTEM observations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 459
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Onda, K., Toyoshima, H., Mizuki, E., Samoto, N., Kazuara, M., and Itoh, T., presented at the International Electron Device Meeting, San Franscisco, CA December 9-12, 1990.Google Scholar
2. Marzin, J.Y., Gerard, J.M., Voisin, P., and Brum, J. A., in Semiconductors and Semimetals. Vol. 32 (Strained-Layer Superlattices: Physics), ed. By Pearsall, T.P. (Academic Press, New York, 1990), p. 106.Google Scholar
3. Brandt, O., Tapfer, L., Cignolani, R., Ploog, K., Hohenstein, M., and Phillip, F., Phys. Rev. B 41, 12599 (1990)CrossRefGoogle Scholar
4. Cignolani, R., Brandt, O., Tapfer, L., Scamarcio, G., La, G.C. Rocca, and Ploog, K., Phys. Rev. B 42, 3209 (1990).Google Scholar
5. Lee, J.H., Hsieh, K.Y., and Kolbas, R.M., Phys. Rev. B 41 7678 (1990).Google Scholar
6. Tishler, M.A., Anderson, N.G., Kolbas, R.M., and Bedair, S.M., Appl. Phys. Lett. 50, 1266 (1987).Google Scholar
7. Taira, K., Kawai, H., Hase, I., Kaneko, K., and Wantabe, N., Appl. Phys. Lett 52, 495 (1988).Google Scholar
8. Yano, M, Iwawaki, T., Yokose, H., Kawaguchi, A., Iwai, Y., and Inoue, M., Proceedings of the International Society for Optical Engineering 1283, 221 (SPIE, Bellingham, 1990).Google Scholar
9. Ksendzov, A., Grunthaner, F.J., Liu, J.K., Rich, D.H., Terhune, R.W., and Wilson, B.A., to be published in Phys. Rev. B 4a.Google Scholar
10. Rich, D. H., Ksendzov, A., Terhune, R.W., Grunthaner, F.J., Wilson, B.A., Shen, H., Dutta, M., Vernon, S.M., and Dixon, T.M., Phys. Rev. B 42, 6836 (1991).CrossRefGoogle Scholar
11. Grundmann, M., Cristen, J., Bimberg, D., Fischer-Colbrie, A., and Hull, R., J. Appl. Phys. 66, 3314 (1989).Google Scholar
12. Shen, H., Parayanthal, P., Yin, Y.F., and Pollak, F.H., Rev. Sci. Instrum. 58 1429 (1987)Google Scholar
13. Glembocki, O.J. and Shanabrook, B.V., Superlattices and microstructures 5, 603 (1989); B.V. Shanabrook, O.J. Glembocki and W.T. Beard, Phys. Rev. B 15, 2540 (1987).CrossRefGoogle Scholar
14.Change of the line broadening in InGaAs/GaAs QWs was found to be only -2 meV for the 77-300 K range: Huang, K. F., Tai, K., Chu, S. N.G. and Cho, A.Y., Appl. Phys. Lett. 54, 2026 (1989).CrossRefGoogle Scholar
15. Landolt-Bomstein, New Series, Group III, ed. by Hellwege, K.H. (Springer-Verlag, Berlin, 1982), vol.179.Google Scholar
16. Kangarlu, A., Chandrasekhar, H.R., Chandrasekhar, M., Kapoor, Y.M., Chambers, F.A., Vojak, B.A., and Meese, J.M., Phys. Rev. B 37 1035 (1988).Google Scholar