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Optical and Microstructural Properties of N- and Ga-Polarity GaN

Published online by Cambridge University Press:  01 February 2011

A. Bell ,
J. L. Smit ,
R. Liu ,
J. Mei ,
F. A. Ponce ,
H. M. Ng ,
A. Chowdhury  and
N. G. Weimann
A. Bell
Affiliation:
Dept. of Physics and Astronomy, Arizona State University, Tempe, AZ, 85287–1504.
J. L. Smit
Affiliation:
Dept. of Physics and Astronomy, Arizona State University, Tempe, AZ, 85287–1504.
R. Liu
Affiliation:
Dept. of Physics and Astronomy, Arizona State University, Tempe, AZ, 85287–1504.
J. Mei
Affiliation:
Dept. of Physics and Astronomy, Arizona State University, Tempe, AZ, 85287–1504.
F. A. Ponce
Affiliation:
Dept. of Physics and Astronomy, Arizona State University, Tempe, AZ, 85287–1504.
H. M. Ng
Affiliation:
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, NJ.
A. Chowdhury
Affiliation:
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, NJ.
N. G. Weimann
Affiliation:
Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, NJ.
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Abstract

The effect of polarity on the optical and microstructural properties of GaN is presented. A sample with adjacent domains of Ga- and N-polarity material was grown by varying the nucleation layer. This allows a unique opportunity to study the two different polarities under controlled conditions. We found that the N-polarity material has a much lower dislocation density than the Ga-polarity material. The N-polarity material contains voids that are not present in the Ga-polarity region. The surface roughness of the N-polarity material appears to be caused by Ga-polarity inversion domains which lead the growth. A cathodoluminescence study showed that the N-polarity material is much brighter than the Ga-polarity material, suggesting a higher donor concentration, probably due to increased impurity incorporation in the [0001] growth direction or possibly due to an increase in intrinsic point defects. There is also evidence that the N-polarity region contains two types of material, one is flat and can be etched, the other has an inclined facet and does not etch.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y5.52
Copyright
Copyright © Materials Research Society 2004

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References

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