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Optical and EPR Study of Defects in Cadmium Germanium Arsenide

Published online by Cambridge University Press:  11 February 2011

Lihua Bai ,
N. Y. Garces ,
Nanying Yang ,
P. G. Schunemann ,
S. D. Setzler ,
T. M. Pollak ,
L. E. Halliburton  and
N. C. Giles
Lihua Bai
Affiliation:
Physics Department, West Virginia University, Morgantown, WV 26506–6315, U.S.A.
N. Y. Garces
Affiliation:
Physics Department, West Virginia University, Morgantown, WV 26506–6315, U.S.A.
Nanying Yang
Affiliation:
Physics Department, West Virginia University, Morgantown, WV 26506–6315, U.S.A.
P. G. Schunemann
Affiliation:
BAE Systems, Nashua, NH 03061–0868, U.S.A.
S. D. Setzler
Affiliation:
BAE Systems, Nashua, NH 03061–0868, U.S.A.
T. M. Pollak
Affiliation:
BAE Systems, Nashua, NH 03061–0868, U.S.A.
L. E. Halliburton
Affiliation:
Physics Department, West Virginia University, Morgantown, WV 26506–6315, U.S.A.
N. C. Giles
Affiliation:
Physics Department, West Virginia University, Morgantown, WV 26506–6315, U.S.A.
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Abstract

Bulk crystals of CdGeAs2 have been characterized using photoluminescence (PL), optical absorption, Hall effect, and electron paramagnetic resonance (EPR) techniques. An absorption band near 5.5 microns at room temperature is observed in all of the p-type samples we have studied. A correlation between the magnitude of this optical absorption and the excess hole concentration at room temperature is established. Also, an EPR signal is found to correlate with the strength of this absorption band. PL data are consistent with an increased concentration of shallow acceptors being present in high-absorption samples. From the EPR data, we suggest that a model for the paramagnetic defect associated with the absorption at 5.5 microns may be an acceptor on an anion site.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M8.32
Copyright
Copyright © Materials Research Society 2003

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References

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