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Optical and electrical properties of semi-insulating GaN:C grown by MBE

Published online by Cambridge University Press:  11 February 2011

R. Armitage ,
Qing Yang ,
H. Feick ,
S. Y. Tzeng ,
J. Lim  and
E. R. Weber
R. Armitage
Affiliation:
Dept. of Materials Science and Engineering, University of California, Berkeley CA 94720 Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
Qing Yang
Affiliation:
Dept. of Materials Science and Engineering, University of California, Berkeley CA 94720 Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
H. Feick
Affiliation:
Center of Advanced European Studies and Research (caesar), Bonn, Germany
S. Y. Tzeng
Affiliation:
Dept. of Materials Science and Engineering, University of California, Berkeley CA 94720 Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
J. Lim
Affiliation:
Dept. of Materials Science and Engineering, University of California, Berkeley CA 94720 Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
E. R. Weber
Affiliation:
Dept. of Materials Science and Engineering, University of California, Berkeley CA 94720 Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
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Abstract

Semi-insulating wurtzite GaN:C of high optical quality is obtained with CCl4 or CS2 doping sources in plasma-assisted molecular-beam epitaxy in Ga-rich growth conditions. The highest resistivity (107 Ω-cm) is found for [C] in the low 1018 cm−3 range. An increasing fraction of carbon appears to form electrically inactive pair defects for higher doping levels causing the concentration of uncompensated residual donors to be higher in films with [C] in the 1019 cm−3 range compared with [C] in the 1018 cm−3 range. Blue (2.9 eV) and yellow (2.2 eV) luminescence bands are associated with carbon-related defects, and additional support is provided for the association of the blue luminescence with the carbon-acceptor deactivating pair defect. Finally, the temperature dependence of the resistivity is described within the grain-boundary controlled transport model of Salzman et al., Appl. Phys. Lett. 76, 1431 (2000).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L10.7
Copyright
Copyright © Materials Research Society 2003

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References

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