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Optical and electrical properties of Cu2O, Cu4O3 and CuO

Published online by Cambridge University Press:  11 December 2012

Daniel Reppin ,
Angelika Polity ,
Bruno K. Meyer  and
Sviatoslav Shokhovets
Daniel Reppin
Affiliation:
Institute of Experimental Physics I, Justus-Liebig-University, Heinrich-Buff-Ring 16, 35392 Giessen, Germany
Angelika Polity
Affiliation:
Institute of Experimental Physics I, Justus-Liebig-University, Heinrich-Buff-Ring 16, 35392 Giessen, Germany
Bruno K. Meyer
Affiliation:
Institute of Experimental Physics I, Justus-Liebig-University, Heinrich-Buff-Ring 16, 35392 Giessen, Germany
Sviatoslav Shokhovets
Affiliation:
Institute of Physics, Ilmenau University of Technology, Weimarer Strasse 32, 98693 Ilmenau, Germany
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Abstract

We deposited copper oxides by rf magnetron sputtering from a 4N Cu-target at room temperature, varying the oxygen flux and keeping the argon flow constant. Dependent on the oxygen flux Cu2O, Cu4O3or CuO were synthesized. The different compounds were characterized by XRD. The dielectric functions of the oxides were determined by spectroscopic ellipsometry and show significant differences between the compounds. The electrical properties, like the carrier concentration, of each compound can be tuned by adjusting the oxygen flux. We discuss the structural, optical and electrical properties of the copper oxides in terms of phase purity and stoichiometry deviations.

Keywords

dielectric propertieselectrical propertiesoxide
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1494: Symposium Z – Oxide Semiconductors and Thin Films , 2013 , pp. 165 - 169
Copyright
Copyright © Materials Research Society 2012 

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References

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