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Optical and Electrical Properties of Al1−xInxN Films Grown on Sapphire (0001) by Plasma Source Molecular Beam Epitaxy

Published online by Cambridge University Press:  17 March 2011

Y. V. Danylyuk ,
M. J. Lukitsch ,
C. Huang ,
G. W. Auner ,
R. Naik  and
V. M. Naik
Y. V. Danylyuk
Affiliation:
Dept. of Electrical and Computer Engineering, Wayne State University, Detroit, MI
M. J. Lukitsch
Affiliation:
Dept. of Electrical and Computer Engineering, Wayne State University, Detroit, MI
C. Huang
Affiliation:
Dept. of Electrical and Computer Engineering, Wayne State University, Detroit, MI
G. W. Auner
Affiliation:
Dept. of Electrical and Computer Engineering, Wayne State University, Detroit, MI
R. Naik
Affiliation:
Dept. of Physics, Wayne State University, Detroit, MI
V. M. Naik
Affiliation:
Department of Natural Sciences, University of Michigan-Dearborn, Dearborn, MI
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Abstract

A series of epitaxial InxAl1−xN alloy films (thickness ~ 150 nm) with 0 ≤ × ≤ 1.0 were grown by Plasma Source Molecular Beam Epitaxy (PSMBE) on sapphire (0001) at a low substrate temperature of 375 °C. X-ray diffraction (XRD) measurements confirm a c-axis oriented epitaxial growth of alloy films without any alloy segregation. However, the degree of crystalline mosaicity, compositional fluctuation and surface roughness, all increase with increasing x. The direct energy band gap of alloy films were determined using optical (UV-VIS) transmission and reflection measurements. The observed bowing of the direct gap versus x plot, when compared to the theoretical prediction, is less pronounced than seen in earlier studies reported in literature. Electrical resistivity and Hall effect measurements show n-type electrical conductivity in these alloys with carrier concentrations ~1019-1020 cm−3 for x > 0.5.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G6.29
Copyright
Copyright © Materials Research Society 2001

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References

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