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Optical activation of Si nanowires using Er-doped sol-gel derived silica

Published online by Cambridge University Press:  01 February 2011

Kiseok Suh
Affiliation:
Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), 373–1, Guseong-dong, Yuseong-gu, Daejeon, Korea
Oun-Ho Park
Affiliation:
Department of Materials Science and Engineering, KAIST, 373–1 Guseong-dong, Yuseong-gu, Daejeon, Korea
Byeong-Soo Bae
Affiliation:
Department of Materials Science and Engineering, KAIST, 373–1 Guseong-dong, Yuseong-gu, Daejeon, Korea
Jung-Chul Lee
Affiliation:
Materials science and Technology Division, Korea Institute of Science and Technology (KIST), P.O. Box 131, Cheongryang, Seoul 130–650, Korea
Heon-Jin Choi
Affiliation:
Department of Ceramics, Yonsei University, Seoul 120–749, Korea
Jung H. Shin
Affiliation:
Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), 373–1, Guseong-dong, Yuseong-gu, Daejeon, Korea
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Abstract

Optical activation of Si nanowires (Si-NWs) using sol-gel derived Er-doped silica is investigated. Si-NWs of about 100 nm diameter were grown on Si substrates by the vapor-liquid-solid method using Au catalysts and H2 diluted SiCl4. Afterwards, Er-doped silica sol-gel solution was spin-coated, and annealed at 950 °C in flowing N2/O2 environment. Such Er-doped silica/Si-NWs nanocomposite is found to combine the advantages of crystalline Si and silica to simultaneously achieve both high carrier-mediated excitation efficiency and high Er3+ luminescence efficiency while at the same time providing high areal density of Er3+ and easy current injection, indicating the possibility of developing sol-gel activated Si-NWs as a new material platform for Si-based photonics.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

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