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Optical Absorption, Raman, and Photoluminescence Excitation Spectroscopy of Inhomogeneous InGaN Films

Published online by Cambridge University Press:  15 February 2011

L.H. Robins ,
A.J. Paul ,
C.A. Parker ,
J.C. Roberts ,
S.M. Bedair ,
E.L. Piner  and
N.A. El-Masry
L.H. Robins
Affiliation:
National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899
A.J. Paul
Affiliation:
National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899
C.A. Parker
Affiliation:
Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695
J.C. Roberts
Affiliation:
Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695
S.M. Bedair
Affiliation:
Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695
E.L. Piner
Affiliation:
Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
N.A. El-Masry
Affiliation:
Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
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Abstract

InGal-xN films with x=0.06 to x=0.49 were characterized by optical transmittance, Raman, and photoluminescence excitation spectroscopies. Previous microstructural characterizations detected phase separation only in films with x>0.2. The transmittance data suggest that compositional inhomogeneity is also present in the lower-x films (x<0.2). Both Raman and photoluminescence excitation spectra show features that correlate with compositional inhomogeneity and phase separation in the films with x>0.2. The composition dependence of the Raman spectra, from x=0.28 to x=0.49, is consistent with an increase in the size of the phase-separated regions with increasing x.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G3.22
Copyright
Copyright © Materials Research Society 1999

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