Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-29T09:43:31.229Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical Absorption In Hg1−xCdxTe

Published online by Cambridge University Press:  10 February 2011

Vaidya Nathan
Vaidya Nathan*
Affiliation:
Air Force Research Laboratory/VSSS, 3550 Aberdeen Ave SE, Kirtland AFB, NM 87117-5776
Get access

Abstract

The theory of optical absorption due to interband transitions in direct-gap semiconductors is revisited. A new analytical expression for linear absorption coefficient in narrow-gap semiconductors is obtained by including the nonparabolic band structure due to Keldysh and Burstein-Moss shift. Numerical results are obtained for Hg1−xCdxTe for several values of x and temperature, and compared with recent experimental data. The agreement is found to be good.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 667
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Scott, M. W., J. Appl. Phys. 40, 4077 (1969).Google Scholar
2. Anderson, W. W., Infrared Phys. 20, 363 (1980).Google Scholar
3. Mroczkowski, J. A., Nelson, D. A., Murosako, R., and Zimmerman, P. H., J. Vacuum. Sci. Technol. A1, 1756 (1983).Google Scholar
4. Mollman, K. P. and Kissel, H., Semicond. Sci. Technol. 6, 1167 (1991).Google Scholar
5. Chu, J., Mi, Z., and Tang, D., J. Appl. Phys. 71, 3955 (1992).Google Scholar
6. Hermann, K. H., Happ, M., Kissel, H., Mollman, K. P., Tomm, J. W., Becker, C. R., Kraus, M. M., Yuan, S., and Landwehr, G., J. Appl. Phys. 73, 3486 (1993).10.1063/1.352954Google Scholar
7. Li, B., Chu, J. H., Chang, Y., Gui, Y. S., and Tang, D. Y., Infrared Phys. Technol. 37, 525 (1996).10.1016/S1350-4495(95)00126-3Google Scholar
8. Kane, E. O., J. Phys. Chem. Solids 1, 249 (1957).Google Scholar
9. Keldysh, L.V., Soviet Phys.-J. Exper. Theor. Phys. 6, 763 (1958).Google Scholar
10. Weiler, M. H., in Semiconductors and Semimetals, eited by Willardson, R. K. and Beer, A. C., (Academic Press, New York 1981) Vol.16, p. 180.Google Scholar
11. Kane, E. O., J. Phys. Chem. Solids 2, 181 (1960).Google Scholar
12 Guldner, Y., Rigaux, C., Mycielski, A. and Couder, Y., Phys. Stat. Sol. (b) 82, 149 (1977).Google Scholar
13. Miles, R. W., in Properties of Mercury Cadmium Telluride, edited by Brice, J. and Capper, P., (INSPEC, Inst. Electrical Engineers, New York 1987) p. 116.Google Scholar
14. Weiler, M. H., Agarwal, R. L. and Lax, B., Phys. Rev. B16, 3603 (1977).Google Scholar
15. Baars, J. and Sorger, F., Solid State Commun. 10, 875 (1972).Google Scholar