Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-19T21:53:21.150Z Has data issue: false hasContentIssue false
  • English
  • Français

Onset Conditions for Gas Phase Reaction and Nucleation in the CVD of Transition Metal Oxides

Published online by Cambridge University Press:  15 February 2011

J. Collins ,
D. E. Rosner  and
J. Castillo
J. Collins
Affiliation:
Yale Univ,. Chem. Engrg. Dept., HTCRE Lab., New Haven CT 06520-2159, USA
D. E. Rosner
Affiliation:
Yale Univ,. Chem. Engrg. Dept., HTCRE Lab., New Haven CT 06520-2159, USA
J. Castillo
Affiliation:
U.N.E.D., Dept. Fisica Fundamental, Apdo 60141, Madrid 28080, Spain
Get access

Abstract

A combined experimental/theoretical study is presented of the onset conditions for gas phase reaction and particle nucleation in hot substrate/cold gas CVD of transition metal oxides. Homogeneous reaction onset conditions are predicted using a simple high activation energy reacting gas film theory. Experimental tests of the basic theory are underway using an axisymmetric impinging jet CVD reactor. No “vapor phase ignition” has yet been observed in the TiCl4/O2 system under accessible operating conditions (below substrate temperature Tw=1700 K) and further experiments are planned using more reactive feed materials. The goal of this research is to provide CVD reactor design and operation guidelines for achieving acceptable deposit microstructures at the maximum deposition rate while simultaneously avoiding homogeneous reaction/nucleation and diffusional limitations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 250: Symposium R – Chemical Vapor Deposition of Refractory Metals and Ceramics II , 1991 , 53
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Takashi, Y. et al., J. Cryst. Growth, 74, 409 (1986).Google Scholar
2. Yamane, H. and Hirai, T., J. Mat. Sci. Let., 6(10), 1229, (1987).Google Scholar
3. Balog, M. et al., J. Electrochem. Soc., 126(7), 1203 (1979).Google Scholar
4. Ghoshtagore, R. N, J. Electrochem. Soc., 117(4), 529 (1970); R.N. Ghoshtagore and A.J. Noreika, J. Electrochem. Soc., 117(10), 1310 (1970).CrossRefGoogle Scholar
5. Komiyama, H. et al., in Chemical Vapor Deposition X, edited by G.W., Cullen (Electrochem. Soc. Proc. 87–8, Pennington NJ 1987) pp. 1119–1128.Google Scholar
6. Komiyama, H. and Osawa, T., Jap. J. Appl. Phys., 24(10), L795 (1985).Google Scholar
7. Tirtowidjojo, M. and Pollard, R., J. Cryst. Growth, 98, 420 (1989).Google Scholar
8. Castillo, J. and Rosner, D.E., presented at the 1990 AIChE Meeting, paper no. 55d; J. Electrochem. Soc. publication in preparation.Google Scholar
9. Rosner, D.E. and Collins, J. in Chemical Vapor Deposition XI, edited by K.E., Spear and G.W., Cullen (Electrochem. Soc. Proc. 90–12, Pennington NJ 1990) pp. 49–60.Google Scholar
10. Rosner, D. E., Transport Processes in Chemically Reacting Flow Systems, (Butterworths, Boston, 1986), pp. 307–404 (3rd Printing 1990).Google Scholar
11. Pratsinis, S.E. et al., J. Am. Ceram. Soc., 73(7), 2158 (1990).Google Scholar
12. Chapple-Sokol, J.D. et al., J. Electrochem. Soc., 136(10), 2993 (1989).Google Scholar