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One-Step Silicon Nitride Passivation by ECR-CVD for Heterostructure Transistors and MIS Devices

Published online by Cambridge University Press:  10 February 2011

J. A. Diniz ,
L. E. M. de Barros Jr ,
R. T. Yoshioka ,
G. S. Lujan ,
I. Danilov  and
J. W. Swart
J. A. Diniz
Affiliation:
LPD/IFGW and DSIF/FEEC, State University of Campinas (UNICAMP), P.O. BOX 6165, Campinas, SP, Brazil, 13081–970
L. E. M. de Barros Jr
Affiliation:
LPD/IFGW and DSIF/FEEC, State University of Campinas (UNICAMP), P.O. BOX 6165, Campinas, SP, Brazil, 13081–970
R. T. Yoshioka
Affiliation:
LPD/IFGW and DSIF/FEEC, State University of Campinas (UNICAMP), P.O. BOX 6165, Campinas, SP, Brazil, 13081–970
G. S. Lujan
Affiliation:
LPD/IFGW and DSIF/FEEC, State University of Campinas (UNICAMP), P.O. BOX 6165, Campinas, SP, Brazil, 13081–970
I. Danilov
Affiliation:
LPD/IFGW and DSIF/FEEC, State University of Campinas (UNICAMP), P.O. BOX 6165, Campinas, SP, Brazil, 13081–970
J. W. Swart
Affiliation:
LPD/IFGW and DSIF/FEEC, State University of Campinas (UNICAMP), P.O. BOX 6165, Campinas, SP, Brazil, 13081–970
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Abstract

Silicon nitride (SiNx) films with extremely low interface charge densities have been developed by electron cyclotron resonance-chemical vapor deposition (ECR-CVD) deposition on GaAs substrates. The procedure is a one-step process and does not involve H2 and/or N2 pre-treatment of the sample surface. Characterization by Fourier transform infrared (FTIR) and ellipsometry analysis indicate good properties of the film revealing N-H and Si-N bonds. Results of capacitance-voltage (C–V) measurements show surface charge densities on the order of 5 × 1010 cm−2, which we believe is the lowest surface charge density achieved so far over GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 573: Symposium Z – Compound Semiconductor Surface Passivation and Novel Device.. , 1999 , 137
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1. Pearton, S., Topics in growth and device processing of II-V semiconductors, World Scientific, 1996 Google Scholar
2. Wang, Q., Yang, E.S., Li, P.W., Lu, Z., Osgood, R.M., Jr., Wang, W.I., IEEE Electron Devices Lett., 13 (1992), 83 Google Scholar
3. Diatezua, D.M., Wang, Z., Park, D., Chen, Z., Rockett, A. and Morkoc, H., Vac, J.. Sci. Technol. B, 16 (2), Mar/Apr 1998 Google Scholar
4. Diniz, J.A., Lujan, G. S., Tatsch, P.J. and Swart, J.W., Proceedings of XIII Conference of The Brazilian Microeletronics Society, 1 185 (1998).Google Scholar
5. Hseih, S.W., Chang, C.Y., Lee, Y.S., Lin, C.W., Hsu, S.C., J. Appl.Phys. 76(6) (1994), 3645.Google Scholar
6. Tsu, D.V., Lucovsky, G., Mantini, J. and Chao, S.S., J. Vac. Sci. Technol., A5 (4), 1998 (1987).Google Scholar
7. Mariano, W.C., Ms. Thesis/FEEC/UNICAMP, Brazil (1996).Google Scholar
8. Moshkalyov, S.A., Diniz, J. A., Swart, J.W., Tatsch, P. J., and Machida, M., J. Vac. Sci. Technol., BI15 (6), 2682 (1997).Google Scholar
9. Vuillod, J., J. Vac. Sci. Technol., A5 (4), 1675 (1987).Google Scholar
10. Diniz, J. A., Moshkalyov, S.A., Swart, J.W., and P. J. Tatsch Proceedings of XII Conference of The Brazilian Microeletronics Society (CD-ROM), artigo33.pdf (1997).Google Scholar
11. Malhotra, V. and Wilmsen, C.W., in Handbook of Compound Semiconductors- Growth, Processing, Characterization and Devices, Edited by P.H., Holloway and G.E., McGuire (Noyes Publication, 1995), Chap. 7, pp. 328.Google Scholar