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On the Way Towards High Efficiency Thin Film Silicon Solar Cells by the “Micromorph” Concept

Published online by Cambridge University Press:  10 February 2011

J. Meier ,
P. Torres ,
R. Platz ,
S. Dubail ,
U. Kroll ,
J. A. Anna Selvan ,
N. Pellaton Vaucher ,
Ch. Hof ,
D. Fischer  and
H. Keppner
...Show all authors
J. Meier
Affiliation:
Institut de Microtechnique, A.-L. Breguet 2, Université de Neuchâtel, CH-2000 Neuchâtel, Switzerland
P. Torres
Affiliation:
Institut de Microtechnique, A.-L. Breguet 2, Université de Neuchâtel, CH-2000 Neuchâtel, Switzerland
R. Platz
Affiliation:
Institut de Microtechnique, A.-L. Breguet 2, Université de Neuchâtel, CH-2000 Neuchâtel, Switzerland
S. Dubail
Affiliation:
Institut de Microtechnique, A.-L. Breguet 2, Université de Neuchâtel, CH-2000 Neuchâtel, Switzerland
U. Kroll
Affiliation:
Institut de Microtechnique, A.-L. Breguet 2, Université de Neuchâtel, CH-2000 Neuchâtel, Switzerland
J. A. Anna Selvan
Affiliation:
Institut de Microtechnique, A.-L. Breguet 2, Université de Neuchâtel, CH-2000 Neuchâtel, Switzerland
N. Pellaton Vaucher
Affiliation:
Institut de Microtechnique, A.-L. Breguet 2, Université de Neuchâtel, CH-2000 Neuchâtel, Switzerland
Ch. Hof
Affiliation:
Institut de Microtechnique, A.-L. Breguet 2, Université de Neuchâtel, CH-2000 Neuchâtel, Switzerland
D. Fischer
Affiliation:
Institut de Microtechnique, A.-L. Breguet 2, Université de Neuchâtel, CH-2000 Neuchâtel, Switzerland
H. Keppner
Affiliation:
Institut de Microtechnique, A.-L. Breguet 2, Université de Neuchâtel, CH-2000 Neuchâtel, Switzerland
A. Shah
Affiliation:
Institut de Microtechnique, A.-L. Breguet 2, Université de Neuchâtel, CH-2000 Neuchâtel, Switzerland
K. -D. Ufert
Affiliation:
Siemens Solar, Frankfurter Ring, D-8000 Müinchen, Germany
P. Giannoulès
Affiliation:
SAES Getters GmbH, D-50937 Köln 41, Germany
J Koehler
Affiliation:
University of Konstanz, D-78434 Konstanz, Germany
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Abstract

Recently the authors have demonstrated that compensated or “midgap” intrinsic hydrogenated microcrystalline silicon (μc-Si:H), as deposited by the Very High Frequency Glow Discharge (VHF-GD) technique, can be used as active layer in p-i-n solar cells. Compared to amorphous silicon (a-Si:H), μc-Si:H was found to have a significantly lower energy bandgap of around 1 eV. The combination of both materials (two absorbers with different gap energies) leads to a “real” tandem cell structure, which was called the “micromorph” cell. Micromorph cells can make better use of the sun's spectrum in contrast to conventional double-stacked a-Si:H / a-Si:H tandems.

The present study will show that the compensation technique (involving boron “microdoping”) used sofar for obtaining midgap μc-Si:H can be replaced by the application of a gas purifier. The use of this gas purifier has a beneficial influence on the transport properties of undoped intrinsic μc-Si:H. By this procedure, increased cell efficiencies in both, single microcrystalline silicon p-i-n as well as micromorph cells could be obtained. In the first case 7.7 % stable, and in the second case 13.1% initial efficiency could be achieved under AM1.5 conditions. Preliminary light-soaking experiments performed on the tandem cells indicate that microcrystalline silicon could contribute to an enhancement of the stable efficiency performance. Micromorph cell manufacturing is fully compatible to a-Si:H technology; however, its deposition rate is still too low. With further increase of the rate, a similar cost reduction potential like in a-Si:H technology can be extrapolated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 3
Copyright
Copyright © Materials Research Society 1996

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References

[1] Curtins, H., Wyrsch, N., Shah, A., Electron. Lett. 23, (1987), p. 228.Google Scholar
[2] Flückiger, R., Meier, J., Keppner, H., Götz, M., Shah, A., Proc. 23rd IEEE PVSC (1993), p. 839.Google Scholar
[3] Keppner, H., Kroll, U., Meier, J., Shah, A., Solid State Phenomena 44–46, (1995), pp. 97–126.Google Scholar
[4] Finger, F., Hapke, P., Luysberg, M., Carius, R., Wagner, H., Appl. Phys. Lett. 65, (1994), p. 2588.Google Scholar
[5] Flückiger, R., Meier, J., Crovini, G., Demichelis, F., Giorgis, F., Pirri, C. F., Tresso, E., Pohl, J., Rigato, V., Zandolin, S., Caccavale, F., Mat. Res. Soc. Symp. Proc. 358, (1995), p. 751.Google Scholar
[6] Grebner, S., Wang, F., and Schwarz, R., Mat. Res. Soc. Symp. Proc. 283, (1992), p.513.Google Scholar
[7] Wang, F., Liu, H.N., He, Y.L., Schweiger, A., Schwarz, R., J. Non-Cryst. Solids 137&138, (1991), p. 511.Google Scholar
[8] Willeke, G., thesis (1983), Univ. of Dundee.Google Scholar
[9] C. Wang, G. Lucowsky, 21th IEEE (1990), p. 1614; and Williams, M.J., Wang, C., Lucovsky, G., J. Non-Cryst. Solids 137&138, (1991), p. 737.Google Scholar
[10] Torres, P., Keppner, H., Flückiger, R., Meier, J., Shah, A., Kiess, H., Proc. 12th EC PVSEC (1994), p. 705.Google Scholar
[11] Keppner, H., Torres, P., Flückiger, R., Meier, J., Shah, A., Fortmann, C., Fath, P., Willeke, G., Happle, K., Kiess, H., Solar Energy Materials and Solar Cells 34, (1994), p. 201.Google Scholar
[12] Flüickiger, R., Meier, J., Goetz, M., Shah, A., J. Appl. Phys. 77, (1995), p. 712.Google Scholar
[13] Meier, J., Flückiger, R., Keppner, H., Shah, A., Appl. Phys. Lett. 65, (1994), p. 860.Google Scholar
[14] Meier, J., Dubail, S., Flückiger, R., Fischer, D., Keppner, H., Shah, A., Proc. 1st WCPEC (1994), p. 409.Google Scholar
[15] Meier, J., Flückiger, R., Keppner, H., Götz, M., Shah, A., Proc. 12th EC PVSEC (1994), p. 1237.Google Scholar
[16] Meier, J., Dubail, S., Selvan, J.A. Anna, Vaucher, N. Pellaton, Platz, R., Hof, C., Flückiger, R., Kroll, U., Wyrsch, N., Torres, P., Keppner, H., Shah, A., Ufert, K.D., Proc. 13th Europ. PVSEC, (Nice 1995), p. 1445.Google Scholar
[17] Beck, N., Meier, J., Fric, J., Remes, Z., Poruba, A., Flückiger, R., Pohl, J., Shah, A., Vanecek, M., 16th ICAS (Kobe 1995), to be published in J. Non-Cryst. Solids.Google Scholar
[18] Green, M.A., Keevers, M. J., Progress in Photovoltaics: Research and Applications 3, (1995), p. 189.Google Scholar
[19] Flückiger, R., Meier, J., Shah, A., Catana, A., Brunel, M., Nguyen, H.V., Collins, R.W., Carius, R., Mat. Res. Soc. Symp. Proc. 336, (1994), p. 511.Google Scholar
[20] Kroll, U., Meier, J., Keppner, H., Shah, A., Littlewood, S.D., Kelly, I.E., Giannoulès, P., J. Vac. Sci. Technol. A 13, (1995), p. 2742.Google Scholar
[21] Kroll, U., Meier, J., Keppner, H., Shah, A., Littlewood, S.D., Kelly, I.E., Giannoulès, P., Mat. Res. Soc. Symp. Proc. 377, (1995), p. 39.Google Scholar
[22] Selvan, J.A. Anna, Keppner, H., Götz, M., Shah, A., this conference.Google Scholar
[23] van den Berg, P., Calwer, H., Marklsdorfer, P., Meckes, R., Schulze, F. W., Ufert, K.-D., Vogt, H., Solar Energy Materials and Solar Cells 31, (1993), p. 253.Google Scholar
[24] Platz, R., Fischer, D., Hof, C., Dubail, S., Kroll, U., Meier, J., Shah, A., this conference.Google Scholar
[25] Fischer, D., Shah, A., Appl. Phys. Lett. 65, (1994), p. 986.Google Scholar
[26] Torres, P. et al., to be submitted to Appl. Phys. Lett..Google Scholar
[27] Brodsky, M.H., Cardona, M., Cuomo, J.J., Phys. Rev. B 16, (1977), p. 3556.Google Scholar
[28] Lucovsky, G., Nemanich, R.J., Knights, J.C., Phys. Rev. B 19, (1979), p. 2064.Google Scholar
[29] Wagner, H., Beyer, W., Solid State Commun. 48, (1983), p. 587.Google Scholar
[30] Chabal, Y.J., Chaban, E.E., Christman, S.B., J. Electron Spectr. and Rel. Phenom. 29, (1983), p. 35.Google Scholar
[31] Chabal, Y.J., Phys. Rev. Lett. 50, (1983), p. 1850.Google Scholar
[32] Satoh, T., Hiraki, A., Jpn. J. Appl. Phys. 24, (1985), p. L491.Google Scholar
[33] Kroll, U., Meier, J., Shah, A., Mikhailov, S., Weber, J., submitted to J. Appl. Phys..Google Scholar
[34] Finger, F., Prasad, K., Dubail, S., Shah, A., Tang, X.-M., Weber, J., Beyer, W., Mat. Res. Soc. Symp. Proc. 219, (1991), p. 383.Google Scholar
[35] Wyrsch, N., Goerlitzer, M., Beck, N., Meier, J., Shah, A., this conference.Google Scholar
[36] Baba, T., Matsuyama, T., Tsuge, S., Wakisaka, K., Tsuda, S., Proc. 13th Europ. PVSEC, (Nice 1995), p. 1708.Google Scholar
[37] Yang, J., Xu, X., Guha, S., Mat. Res. Soc. Symp. Proc. 336, (1994), p. 687.Google Scholar