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On the Structure of Carbon Films Deposited on Si(111) by Mass-Selected Low Energy C+ Beams
Published online by Cambridge University Press: 21 February 2011
Abstract
Our recent report of epitaxial single crystal growth of C+ ion-beam-deposited diamond films on (111) single crystals of silicon is shown to be incorrect. We briefly describe the circumstances leading to this revision (and to our earlier finding) and discuss the possible structure of these films based on preliminary synchrotron X-ray data and on the Raman spectrum.
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- Copyright © Materials Research Society 1989
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