Hostname: page-component-7bb8b95d7b-l4ctd Total loading time: 0 Render date: 2024-10-04T19:20:44.387Z Has data issue: false hasContentIssue false
  • English
  • Français

On The Rapid Thermal Sintering Of Thin Amorphous Si-Metal-Si Structures

Published online by Cambridge University Press:  26 February 2011

Menachem Natan
Menachem Natan*
Affiliation:
Martin Marietta Laboratories, 1450 S. Rolling Road, Baltimore, MD 21227
Get access

Abstract

The development of rapid thermal annealing (RTA) or sintering (RTS) techniques for processing of Si and compound semiconductor metallizations also opens a new avenue for investigations of the initial stages of high-temperature, solid state reactions in thin amorphous multilayers. Of particular interest in this regard are the nucleation and early growth of silicides. In this study we suggest a method to prepare large numbers of specimens for TEM, using deposition of Si/metal/Si tri layers on electron microscope grids and annealing the grids in an RTA system. The method enables quick determination of first silicide phases, nuclei shape and density, relative nucleation and growth rates and, for some systems, the diffusing species. Seven widely used metals are investigated: Co, Cr, Nb, Ni, Mo, Ti, and Ta. The first silicide phases determined from electron diffraction patterns are listed and compared to first phases reported in longer furnace annealings. TEM cross sections of reacted Si/Ta/Si and Si/Nb/Si show two different growth morphologies, which are discussed in terms of main diffusing species in a proposed model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 115
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tsaur, B.Y., Silversmith, D.J., Mountain, R.W., Hung, L.S., Lau, S.S., and Sheng, T.T., J. Appl. Phys. 52, 5243 (1981).Google Scholar
2. Oppolzer, H., Neppl, F., and Hieber, K., In Proceedings of the MRS Society Symposium on Thin Films and Interfaces II (1984), vol. 25, p. 593.Google Scholar
3. Associates, A.G., Palo Alto, CA.Google Scholar
4. Ottavlannl, G., In Proceedings of the MRS Society Symposium on Thin Films and Interfaces II (1984), vol. 25, p. 21.Google Scholar
5. Nlcolet, M-A. and Lau, S.S., in VLSI ElectronIcs-Microstructure Science, vol. 6, edited by Einspruch, N.G., (Academic Press, NY, 1983).Google Scholar
6. Beyers, R. and Sinclair, R., J. Appl. Phys. 57, 5240 (1985).Google Scholar
7. van Gurp, G.J., van der Weg, W.F., and Sigmund, D., J. Appl. Phys. 49, 4011 (1978).Google Scholar
8. Natan, M., unpublished results.Google Scholar
9. Majnl, G., Costato, M., and Panini, F., Thin Solid Films, 125, 74 (1985).Google Scholar