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On the Origin of Multiple Peaks in the Deep Level Admittance Spectroscopy of Dx Centers in AlGaAs:Sn

Published online by Cambridge University Press:  16 February 2011

S. Chakravarty ,
S. Subramanian  and
B. M. Arora
S. Chakravarty
Affiliation:
Tata Institute of Fundamental Research, Bombay 400 005, India
S. Subramanian
Affiliation:
Tata Institute of Fundamental Research, Bombay 400 005, India
B. M. Arora
Affiliation:
Tata Institute of Fundamental Research, Bombay 400 005, India
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Abstract

Deep level admittance spectroscopy (DLAS) of the Sn-DX centers in Alx Ga1−x As:Sn (0.2 < x < 0.6) shows three peaks SNi, SN2 and SN3. The SN3 peak is identified to be related to the dominant peak of the Sn-DX center observed in the conventional DLTS technique. The SN1 and SN2 peaks are not easily seen in DLTS. A careful analysis of the DLAS data shows that the three peaks are not due to independent (chemically distinct) defects related to Sn, but they are caused by the multiple sates of the same DX center.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 184: Symposium F – Degradation Mechanisms in III-V Compound Semiconductor Devices and Structures , 1990 , 61
Copyright
Copyright © Materials Research Society 1990

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References

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