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On the nucleation of GaP/GaAs and the effect of buried stress fields

Published online by Cambridge University Press:  01 February 2011

João Guilherme Zelcovit ,
José Roberto R. Bortoleto ,
Jefferson Bettini  and
Mônica Cotta
João Guilherme Zelcovit
Affiliation:
[email protected], Unicamp, DFA, CP6165, Campinas, São Paulo, 13081-790, Brazil, 55-19-37885338, 55-19-37885343
José Roberto R. Bortoleto
Affiliation:
[email protected], Unicamp, DFA, Brazil
Jefferson Bettini
Affiliation:
[email protected], LNLS, LME, Brazil
Mônica Cotta
Affiliation:
[email protected], Unicamp, DFA, Brazil
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Abstract

We have recently shown that spatial ordering for epitaxially grown InP dots can be obtained using the periodic stress field of compositional modulation on the InGaP buffer layer. The aim of this present work is to study the growth of films of GaP by Chemical Beam Epitaxy (CBE), with in-situ monitoring by Reflection High Energy Electron Diffraction (RHEED), on layers of unstressed and stressed GaAs. Complementary, we have studied the role of a buried InP dot array on GaP nucleation in order to obtain three-dimensional structures. In both cases, the topographical characteristics of the samples were investigated by Atomic Force Microscopy (AFM) in non-contact mode. Thus vertically-coupled quantum dots of different materials have been obtained keeping the in-place spatial ordering originated from the composition modulation.

Keywords

epitaxycrystal growthtransmission electron microscopy (TEM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE03-15
Copyright
Copyright © Materials Research Society 2006

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References

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