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On the Luminescence of VLS-grown GaAs-AlGaAs Core-Shell Nanowires and its Dependence on MOVPE Growth Conditions

Published online by Cambridge University Press:  31 January 2011

Paola Prete ,
Nico Lovergine ,
Ilio Miccoli ,
Fabio Marzo ,
Joan S. Burger ,
Giancarlo Salviati  and
Laura Lazzarini
Paola Prete
Affiliation:
[email protected], IMM-CNR, Lecce, Italy
Nico Lovergine
Affiliation:
[email protected], University of Salento, Innovation Engineering, Lecce, Italy
Ilio Miccoli
Affiliation:
[email protected], University of Salento, Innovation Engineering, Lecce, Italy
Fabio Marzo
Affiliation:
[email protected], University of Salento, Innovation Engineering, Lecce, Italy
Joan S. Burger
Affiliation:
[email protected], University of Salento, Innovation Engineering, Lecce, Italy
Giancarlo Salviati
Affiliation:
[email protected], IMEM-CNR, Parma, Italy
Laura Lazzarini
Affiliation:
[email protected], IMEM-CNR, Parma, Italy
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Abstract

We report on the photoluminescence (PL) of GaAs-Al0.32Ga0.68As core-shell nanowires grown by MOVPE, and their dependence on the precursors V:III molar ratio utilised in the vapor during growth. It is shown that the PL emission of the GaAs nanowire core red-shifts with decreasing the V:III ratio from 30:1 to 4:1, an effect tentatively ascribed to the build-up of a space-charge region at the core-shell hetero-interface, the latter associated to the unintentional incorporation of impurities, namely C in GaAs and Si in AlGaAs.

Keywords

core/shellmetalorganic depositionIII-V
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1206: Symposium M – Multifunction at the Nanoscale through Nanowires , 2009 , 1206-M11-36
Copyright
Copyright © Materials Research Society 2010

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