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“On the Growth - and Annealing - Temperature Dependence of the Electrical Properties of Ga0.51In0.49P/GaAs Heterostructures Grown by Mombe”

Published online by Cambridge University Press:  25 February 2011

E. C. Paloura ,
A. Ginoudi ,
N. Frangis  and
A. Christou
E. C. Paloura
Affiliation:
Aristotle Univ. of Thessaloniki, Physics Dept, 54006 Thessaloniki, Greece.
A. Ginoudi
Affiliation:
b) Foundation of Research and Technology, IESL, 711 10 Heraklion, Crete.
N. Frangis
Affiliation:
b) Foundation of Research and Technology, IESL, 711 10 Heraklion, Crete.
A. Christou
Affiliation:
b) Foundation of Research and Technology, IESL, 711 10 Heraklion, Crete.
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Abstract

We study the effect of growth temperature (TG) and post-growth rapid thermal annealing (RTA) on the electrical properties of Schottky diodes fabricated on undoped, lattice-matched Ga0.51In0.49P/GaAs heterostructures. The samples were grown by metalorganic molecular beam epitaxy (MOMBE) in the temperature range 480 – 560°C. Ga0.51In0.49P grown in this temperature range undergoes spinodal decomposition, as shown by cross-section TEM analysis. The dislocation-free epilayers grown at TG≤520°C are characterized by a deep electron trap with an activation energy of 800meV while growth at higher temperatures renders trap-free films. Furthermore, the Schottky barrier ideality factor (n) depends strongly on TG and takes the best value of 1.4 for TG=540°C, while the barrier height remains nearly constant at about 0.75eV. Finally, upon capped rapid thermal annealing the value of n improves while the trap concentration decreases significantly. Based on the presented experimental evidence we can propose that MOMBE growth at 540°C renders films with improved electrical properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 55
Copyright
Copyright © Materials Research Society 1993

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