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On the Formation Kinetics of Thin Nanopatterned Layers on Silicon Wafers Created by Hydrogen Plasma Exposure

Published online by Cambridge University Press:  01 February 2011

R. Job ,
Y. L. Huang ,
Y. Ma ,
B. Zölgert  and
W. Düngen
R. Job
Affiliation:
University of Hagen, Department of Electrical Engineering and Information Technology (LGBE), D-58084 Hagen, Germany
Y. L. Huang
Affiliation:
University of Hagen, Department of Electrical Engineering and Information Technology (LGBE), D-58084 Hagen, Germany
Y. Ma
Affiliation:
University of Hagen, Department of Electrical Engineering and Information Technology (LGBE), D-58084 Hagen, Germany
B. Zölgert
Affiliation:
University of Hagen, Department of Electrical Engineering and Information Technology (LGBE), D-58084 Hagen, Germany
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Abstract

Czochralski silicon wafers which are treated by hydrogen plasma at ca. 260 °C are structured at the surface due to the high reactivity of atomic hydrogen. “Nanopatterned” (np) Si layers with average structure diameters below 100 nm are created. The thickness of the np-Si layer is on the order of 100 nm. The morphology of np-Si layers depend on the applied plasma power and the exposure time. The formation of np-Si layers is discussed in the frame of a combined etching/ redeposition mechanism. Annealing at T ≥ 800 °C causes a reconstruction of np-Si layers and the appearance of tensile stress in the wafers up to a depth of several micrometers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 849: Symposium KK – Kinetics-Driven Nanopatterning on Surfaces , 2004 , KK7.2
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Pankove, J.I., Johnson, N.M., Hydrogen in Semiconductors (Academic Press, New York, 1991).Google Scholar
2. Pearton, S.J., Corbett, J.W., Stavola, M., Hydrogen in Crystalline Semiconductors (Springer, Berlin, Heidelberg, New York, 1992).Google Scholar
3. Job, R., Beaufort, M.F., Barbot, J.F., Ulyashin, A.G., Fahrner, W.R., MRS Symp. Proc. Series 719, 217 (2002).Google Scholar
4. Job, R., Ulyashin, A.G., Fahrner, W.R., Beaufort, M.F., Barbot, J.F., The European Physical Journal - Applied Physics 23, 25 (2003).Google Scholar
5. Job, R., Ma, Y., Ulyashin, A.G., MRS Symp. Proc. Series 788, 571 (2004).Google Scholar
6. Ma, Y., Job, R., Huang, Y.L., Fahrner, W.R., Beaufort, M.F., Barbot, J.F., J. Electrochem. Soc. 151, G627 (2004).Google Scholar
7. Job, R., Ma, Y., Huang, Y.L., Düngen, W., Electrochem. Soc. Proc., 2004–05; 407 (2004).Google Scholar
8. Lu, F., Corbett, J.W., Snyder, L.C., Phys. Lett. A 133, 249 (1988).Google Scholar
9. Bingham, R.C., Dewar, M.J.S., Lo, D.C., J. Am. Chem. Soc. 97, 1285 (1975).Google Scholar
10. Perrin, J., J. Non-Cryst. Solids 137–138, 639 (1991).Google Scholar
11. Nakamura, K., Yoshino, K. and Takeoka, S., Shimizu, I., Jpn. J. Appl. Phys. 34, 442 (1995).Google Scholar
12. Mutsuda, A., Goto, T., MRS Symp. Proc. Series 164, 3 (1990).Google Scholar
13. Huang, Y.L., Ma, Y., Job, R., Meusinger, K., Scherff, M., Fahner, W.R., submitted to J. Electrochem. Soc.Google Scholar