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On the Epitaxy of Metal Films on GaN

Published online by Cambridge University Press:  10 February 2011

Q.Z. Liu ,
K.V. Smith ,
E.T. Yu ,
S.S. Lau ,
N.R. Perkins  and
T.F. Kuech
Q.Z. Liu
Affiliation:
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093
K.V. Smith
Affiliation:
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093
E.T. Yu
Affiliation:
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093
S.S. Lau
Affiliation:
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093
N.R. Perkins
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, WI 53706–1691
T.F. Kuech
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, WI 53706–1691
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Abstract

A variety of metal films deposited at room temperature have been found to grow epitaxially under conventional vacuum conditions on GaN grown by metalorganic vapor phase epitaxy on sapphire substrates. The metal films have been characterized by X-ray diffraction using a thin-film Read camera and by MeV ion channeling measurements. Lattice mismatch between the epitaxial metals and the GaN basal planes ranges from ∼ 0.2% to ∼ 22%, and does not appear to be the determining factor in the epitaxy reported here. Surface structure of the epitaxial metal films has been studied by atomic force microscopy and found to differ considerably from that of nonepitaxial metal films grown on similar GaN substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 1079
Copyright
Copyright © Materials Research Society 1997

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References

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